A memory management method includes identifying memory segments of a memory device. The method also includes identifying, for each memory segment, a number of faulty columns and determining a total number of faulty columns for the memory device. The method also includes, in response to a determination that the total number of faulty columns is greater than a threshold, identifying a memory segment having a highest number of faulty columns. The method also includes disabling the memory segment. Another method includes identifying, for each memory segment, a number of faulty memory blocks and determining a total number of faulty memory blocks. The method also includes, in response to a determination that the total number of faulty memory blocks is greater than a threshold, identifying a memory segment having a highest number of faulty memory blocks. The method also includes disabling the memory segment.