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    NON-VOLATILE MEMORY ARRAY LEAKAGE DETECTION
    2.
    发明申请
    NON-VOLATILE MEMORY ARRAY LEAKAGE DETECTION 有权

    公开(公告)号：US20210398602A1

    公开(公告)日：2021-12-23

    申请号：US16905689

    申请日：2020-06-18

    Applicant: SanDisk Technologies LLC

    Inventor： Aswani Krishna Lakshminarayana Addagalla ,  Sridhar Yadala ,  Pradeep Anantula ,  Sivakumar Grandhi ,  V.S.N.K.Chaitanya G

    IPC: G11C29/44 ,  G11C16/04 ,  G11C16/08

    Abstract: An apparatus and method for detecting leakage current in a non-volatile memory array. A reference current is connected to a leakage detection circuit. A reference code is determined for the leakage detection circuit coupled to a switching circuit. The reference code establishes a leakage current threshold. The reference current is disconnected from the leakage detection circuit and the switching circuit. Next, the leakage detection circuit is connected to a set of word lines of a storage block of a non-volatile memory array by way of the switching circuit. A memory current is generated within the set of word lines. A leakage code is determined for the set of word lines representing leakage current from the word lines in response to the memory current. The leakage code is compared with the reference code. If the leakage code exceeds the reference code, the storage block is deemed unusable.

    Selective body bias for charge pump transfer switches
    5.
    发明授权
    Selective body bias for charge pump transfer switches 有权
    电荷泵转换开关的选择性体偏置

    公开(公告)号：US09520776B1

    公开(公告)日：2016-12-13

    申请号：US14989666

    申请日：2016-01-06

    Applicant: SanDisk Technologies LLC

    Inventor： Gooty Sukumar Reddy ,  Sridhar Yadala

    IPC: G05F1/10 ,  G05F3/02 ,  H02M3/07 ,  G11C16/14 ,  G11C16/26 ,  G11C16/24

    CPC classification number: H02M3/07 ,  G11C5/145 ,  G11C16/30 ,  H02M3/073 ,  H02M2003/075

    Abstract: Techniques are presented for improving the efficiencies of multi-stage charge pumps by reducing the amount of voltage lost across the inter-stage transfer switches of the pump through use a selective body bias. The voltage level from both branches of one stage is each supplied though a corresponding diode to the bulk connection of the transfer switch after the subsequent stage in both branches. This arrangement results in each stage providing a largely uniform amount of gain, without the usual increase of voltage drop with increasing numbers of stages.

    Abstract translation: 提出了通过使用选择性主体偏压减少跨泵级间转换开关的电压损失量来提高多级电荷泵的效率的技术。 在两个分支的后续阶段之间，通过一个相应的二极管分别提供一个级的两个分支的电压电平到转换开关的批量连接。 这种布置导致每个阶段提供大量均匀的增益量，而不会随着阶段数量的增加而通常增加电压降。

    Two way single VREF trim for fully differential CDAC for accurate temperature sensing
    6.
    发明授权
    Two way single VREF trim for fully differential CDAC for accurate temperature sensing 有权

    公开(公告)号：US11514990B1

    公开(公告)日：2022-11-29

    申请号：US17349963

    申请日：2021-06-17

    Applicant: SANDISK TECHNOLOGIES LLC

    Inventor： Nittala Venkata Satya Somanadh Kumar ,  Sridhar Yadala ,  Anupam G N Choudhary ,  Addagalla Aswani Krishna Lakshminarayana

    IPC: G11C29/02 ,  G11C16/30 ,  G11C5/14

    Abstract: A temperature sensing circuit of a data storage system includes a temperature sensor, a digital-to-analog circuit, and a reference generation and trimming circuit configured to generate a common mode voltage (VCM), a positive reference voltage (VREFP), and a negative reference voltage (VREFN) using a single band gap reference signal. The trimming circuit is configured to trim the VCM, VREFP, and VREFN by adjusting a VC trim signal to increase the VCM until a VCM error is below a threshold; adjusting a high temperature trim signal to increase the VREFP and decrease the VREFN until a digital temperature signal associated with the digital-to-analog circuit attains a predetermined accuracy level for a first temperature; and adjusting a low temperature trim signal to increase the VREFP, VCM, and VREFN until the digital temperature signal attains a predetermined accuracy level for a second temperature.

    High voltage generation using low voltage devices
    8.
    发明授权
    High voltage generation using low voltage devices 有权

    公开(公告)号：US09647536B2

    公开(公告)日：2017-05-09

    申请号：US14811314

    申请日：2015-07-28

    Applicant: SanDisk Technologies LLC

    Inventor： Gooty Sukumar Reddy ,  Potnuru Venkata Pradeep Kumar ,  Sridhar Yadala

    IPC: G11C5/14 ,  H02M3/07

    CPC classification number: H02M3/07 ,  G11C5/14 ,  G11C5/145

    Abstract: A charge pump design suitable for generating high voltages employs multiple low voltage capacitors and low voltage transfer switches, with a limited number of high voltage devices. This is designed such that during a first clock phase, capacitors are each connected between an input voltage and ground and, during a second clock phase all the capacitors are connected in series to generate the required voltage. Both the switches (PMOS) and as well the capacitors are realized as low voltage devices. The ability to use low voltage devices can significantly reduce the area and also a reduction in current consumption relative to the usual high voltage charge pumps which uses high voltage devices.

    High Voltage Generation Using Low Voltage Devices
    9.
    发明申请
    High Voltage Generation Using Low Voltage Devices 有权
    使用低压器件的高电压产生

    公开(公告)号：US20170033682A1

    公开(公告)日：2017-02-02

    申请号：US14811314

    申请日：2015-07-28

    Applicant: SanDisk Technologies LLC

    Inventor： Gooty Sukumar Reddy ,  Potnuru Venkata Pradeep Kumar ,  Sridhar Yadala

    IPC: H02M3/07 ,  G11C5/14

    CPC classification number: H02M3/07 ,  G11C5/14 ,  G11C5/145

    Abstract: A charge pump design suitable for generating high voltages employs multiple low voltage capacitors and low voltage transfer switches, with a limited number of high voltage devices. This is designed such that during a first clock phase, capacitors are each connected between an input voltage and ground and, during a second clock phase all the capacitors are connected in series to generate the required voltage. Both the switches (PMOS) and as well the capacitors are realized as low voltage devices. The ability to use low voltage devices can significantly reduce the area and also a reduction in current consumption relative to the usual high voltage charge pumps which uses high voltage devices.

    Abstract translation: 适用于产生高电压的电荷泵设计采用多个低电压电容器和低电压转换开关，具有有限数量的高压器件。 这被设计成使得在第一时钟相位期间，电容器各自连接在输入电压和地之间，并且在第二时钟相位期间，所有电容器串联连接以产生所需的电压。 开关（PMOS）以及电容器都被实现为低电压器件。 与使用高电压设备的通常的高电压电荷泵相比，使用低电压器件的能力可以显着减小面积并减少电流消耗。

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