Invention Grant
- Patent Title: Magnetoresistance effect device
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Application No.: US16235089Application Date: 2018-12-28
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Publication No.: US10984938B2Publication Date: 2021-04-20
- Inventor: Shinji Hara , Akimasa Kaizu
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JPJP2018-007710 20180119
- Main IPC: H01F10/32
- IPC: H01F10/32 ; H01L43/02 ; H01F41/32 ; H01L43/12 ; H03H11/16 ; H03F15/00 ; H01L43/10 ; H03H11/04 ; H03H2/00

Abstract:
The magnetoresistance effect device includes: a magnetoresistance effect element that includes a first magnetization free layer, a magnetization fixed layer or a second magnetization free layer, and a spacer layer interposed between the first magnetization free layer and the magnetization fixed layer or the second magnetization free layer; and a magnetic material part that applies a magnetic field to the magnetoresistance effect element, wherein the magnetic material part is arranged to surround an outer circumference of the magnetoresistance effect element in a plan view in a stacking direction L of the magnetoresistance effect element.
Public/Granted literature
- US20190228894A1 MAGNETORESISTANCE EFFECT DEVICE Public/Granted day:2019-07-25
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