公开(公告)号：US09299366B2

公开(公告)日：2016-03-29

申请号：US14566028

申请日：2014-12-10

Applicant: TDK CORPORATION

Inventor： Tsutomu Aoyama ,  Akimasa Kaizu ,  Tetsuhito Shinohara ,  Yoshikazu Soeno

IPC: G11B5/66 ,  G11B5/127 ,  G11B5/02 ,  G11B5/31 ,  G11B5/00

CPC classification number: G11B5/02 ,  G11B5/3116 ,  G11B5/3146 ,  G11B5/66 ,  G11B2005/0024

Abstract: A magnetic recording and reproducing apparatus includes a magnetic recording medium including a recording layer in which at least two magnetic layers are layered on a non-magnetic substrate; and a magnetic head including a main magnetic pole for applying a recording magnetic field in a direction substantially perpendicular to a recording face of the magnetic recording medium and a microwave generating element that generates a microwave magnetic field. The relationship between a thickness Ts of a magnetic layer having a lowest magnetic anisotropy energy among the at least two magnetic layers composing the recording layer of the magnetic recording medium, and a thickness Tt of the recording layer is Ts/Tt≦0.2. The microwave generating element applies the microwave magnetic field having a width broader than the width of the recording magnetic field generated by the main magnetic pole of the magnetic head to the magnetic recording medium.

Abstract translation: 一种磁记录和再现装置包括：磁记录介质，其包括在非磁性基板上层叠有至少两个磁性层的记录层; 以及包括用于在基本上垂直于磁记录介质的记录面的方向上施加记录磁场的主磁极的磁头和产生微波磁场的微波产生元件。 构成磁记录介质的记录层的至少两个磁性层中的具有最低磁各向异性能的磁性层的厚度Ts与记录层的厚度Tt之间的关系为Ts / Tt＆nlE; 0.2。 微波产生元件将具有比由磁头的主磁极产生的记录磁场的宽度宽的宽度的微波磁场施加到磁记录介质。

公开(公告)号：US11165128B1

公开(公告)日：2021-11-02

申请号：US16930775

申请日：2020-07-16

Applicant: TDK CORPORATION

Inventor： Naomichi Degawa ,  Shinji Hara ,  Akimasa Kaizu

IPC: H01P1/20 ,  H03H1/00 ,  H01P1/218

Abstract: A high-frequency device includes a magnetoresistance effect element which includes a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer positioned between the first and second ferromagnetic layers, a soft magnetic material body which covers at least a part of a periphery of the magnetoresistance effect element from outside in a plan view in a lamination direction of the magnetoresistance effect element, a non-magnetic material body which is positioned between the soft magnetic material body and the first ferromagnetic layer in the plan view in the lamination direction, and a high-frequency line which is connected to or spaced apart from the magnetoresistance effect element. The high-frequency line is configured to input or output a high-frequency current to or from the magnetoresistance effect element, or is configured to apply a high-frequency magnetic field caused by a high-frequency current flowing through the inside to the magnetoresistance effect element.

公开(公告)号：US09640205B1

公开(公告)日：2017-05-02

申请号：US15066510

申请日：2016-03-10

Applicant: TDK CORPORATION

Inventor： Akimasa Kaizu ,  Kei Hirata ,  Yosuke Antoku

IPC: G11B5/024 ,  G11B5/39 ,  G11B5/60 ,  G11B5/265

CPC classification number: G11B5/024 ,  G11B5/012 ,  G11B5/1278 ,  G11B5/265 ,  G11B5/3116 ,  G11B5/4886

Abstract: A magnetic recording-reproducing head includes, on a support member, a first head section having a function of executing a recording process and having a function of executing a reproducing process, and one or more second head sections each having a function of executing an erasing process and having no function of executing a reproducing process.

公开(公告)号：US11243118B2

公开(公告)日：2022-02-08

申请号：US16976110

申请日：2018-03-07

Applicant: TDK Corporation

Inventor： Naoki Ohta ,  Shinji Hara ,  Susumu Aoki ,  Eiji Komura ,  Akimasa Kaizu

IPC: G01J5/22 ,  G01J1/02 ,  G01J5/08 ,  H01L27/146

Abstract: An electromagnetic wave sensor that limits the influence on bolometer membranes that is caused by heat from a local heat source is provided. Electromagnetic wave sensor has first substrate, second substrate that faces first substrate so as to form inner space between first substrate and second substrate, wherein second substrate transmits infrared rays; a plurality of bolometer membranes that is provided in inner space and that is supported by second substrate; local heat source that is formed in first substrate; first electric connection member that connects first substrate to second substrate; and lead that extends on or in second substrate and that connects first electric connection member to bolometer membrane.

公开(公告)号：US10984938B2

公开(公告)日：2021-04-20

申请号：US16235089

申请日：2018-12-28

Applicant: TDK CORPORATION

Inventor： Shinji Hara ,  Akimasa Kaizu

IPC: H01F10/32 ,  H01L43/02 ,  H01F41/32 ,  H01L43/12 ,  H03H11/16 ,  H03F15/00 ,  H01L43/10 ,  H03H11/04 ,  H03H2/00

Abstract: The magnetoresistance effect device includes: a magnetoresistance effect element that includes a first magnetization free layer, a magnetization fixed layer or a second magnetization free layer, and a spacer layer interposed between the first magnetization free layer and the magnetization fixed layer or the second magnetization free layer; and a magnetic material part that applies a magnetic field to the magnetoresistance effect element, wherein the magnetic material part is arranged to surround an outer circumference of the magnetoresistance effect element in a plan view in a stacking direction L of the magnetoresistance effect element.

公开(公告)号：US10559412B2

公开(公告)日：2020-02-11

申请号：US16204502

申请日：2018-11-29

Applicant: TDK CORPORATION

Inventor： Akimasa Kaizu ,  Naomichi Degawa ,  Tetsuya Roppongi

IPC: H01F10/32 ,  H01L43/02 ,  H03H11/04 ,  H03B15/00 ,  H03H11/16 ,  H03F15/00 ,  H01L27/22 ,  H03H2/00 ,  G01R33/09 ,  H01L43/10

Abstract: At least one magnetoresistance effect element and a magnetic field applying unit to apply a magnetic field to the magnetoresistance effect element, the magnetic field applying unit includes a first ferromagnetic material having a portion protruding to the magnetoresistance effect element side in a stacking direction of the magnetoresistance effect element, a second ferromagnetic material sandwiching the magnetoresistance effect element with the first ferromagnetic material, and a coil wound around the first ferromagnetic material, a first magnetization free layer of the magnetoresistance effect element has a portion free of overlapping with at least one of a second surface of the protruding portion on the magnetoresistance effect element side and a third surface of the second ferromagnetic material on the magnetoresistance effect when viewed in the stacking direction, and a center of gravity of the first magnetization free layer, positioned in a region connecting the second surface and the third surface.

公开(公告)号：US11480477B2

公开(公告)日：2022-10-25

申请号：US16969015

申请日：2018-03-06

Applicant: TDK Corporation

Inventor： Shinji Hara ,  Naoki Ohta ,  Susumu Aoki ,  Eiji Komura ,  Akimasa Kaizu

IPC: G01K7/22 ,  H01C7/06

Abstract: A heat utilizing device is provided in which the thermal resistance of the wiring layer is increased while an increase in electric resistance of the wiring layer is limited. Heat utilizing device has thermistor whose electric resistance changes depending on temperature; and wiring layer that is connected to thermistor. A mean free path of phonons in wiring layer is smaller than a mean free path of phonons in an infinite medium that consists of a material of wiring layer.