Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
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Application No.: US16732367Application Date: 2020-01-02
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Publication No.: US10985048B2Publication Date: 2021-04-20
- Inventor: Chih-Kai Hsu , Ssu-I Fu , Chun-Ya Chiu , Chi-Ting Wu , Chin-Hung Chen , Yu-Hsiang Lin
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L21/8234 ; H01L29/78 ; H01L29/66
Abstract:
A method for fabricating semiconductor device includes the steps of: providing a substrate having a fin-shaped structure thereon; forming a single diffusion break (SDB) structure in the substrate to divide the fin-shaped structure into a first portion and a second portion; forming a first gate structure on the SDB structure; forming an interlayer dielectric (ILD) layer on the first gate structure; removing the first gate structure to form a first recess; and forming a dielectric layer in the first recess.
Information query
IPC分类:
