A nonvolatile memory device includes a memory cell array, a word line drive block that is connected to a first group of memory cells through a first group of word lines and to a second group of memory cells through a second group of word lines, a bit line bias and sense block that is connected to the first and second groups of memory cells through bit lines, a variable current supply block that generates a word line current to be supplied to a selected word line, and a control logic block that receives an address and a command and controls the variable current supply block to adjust an amount of the word line current based on the address. The control logic block further varies the amount of the word line current depending on a distance between the selected word line and the substrate.