Invention Grant
- Patent Title: Highly reliable light emitting diode
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Application No.: US16464679Application Date: 2017-10-11
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Publication No.: US10985304B2Publication Date: 2021-04-20
- Inventor: Se Hee Oh , Hyun A Kim , Joon Sup Lee , Min Woo Kang , Hyoung Jin Lim
- Applicant: SEOUL VIOSYS CO., LTD.
- Applicant Address: KR Ansan-si
- Assignee: SEOUL VIOSYS CO., LTD.
- Current Assignee: SEOUL VIOSYS CO., LTD.
- Current Assignee Address: KR Ansan-si
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2016-0175684 20161221,KR10-2016-0180883 20161228
- International Application: PCT/KR2017/011177 WO 20171011
- International Announcement: WO2018/117382 WO 20180628
- Main IPC: H01L33/64
- IPC: H01L33/64 ; H01L27/15 ; H01L33/10 ; H01L33/20 ; H01L33/40 ; H01L33/62 ; H01L33/36 ; H01L33/02 ; H01L33/60

Abstract:
A light emitting diode including a first semiconductor layer, a mesa disposed thereon and including a second semiconductor layer and an active layer, an ohmic reflection layer disposed on the mesa to form an ohmic contact with the second semiconductor layer, a lower insulation layer covering the mesa and the ohmic reflection layer and partially exposing the first semiconductor layer and the ohmic reflection layer, a first pad metal layer disposed on the lower insulation layer and electrically connected to the first semiconductor layer, a metal reflection layer disposed on the lower insulation layer and laterally spaced apart from the first pad metal layer, and an upper insulation layer covering the first pad metal layer and the metal reflection layer, and having a first opening exposing the first pad metal layer, in which at least a portion of the metal reflection layer covers a side surface of the mesa.
Public/Granted literature
- US20190296204A1 HIGHLY RELIABLE LIGHT EMITTING DIODE Public/Granted day:2019-09-26
Information query
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