- 专利标题: Semiconductor device
-
申请号: US16520761申请日: 2019-07-24
-
公开(公告)号: US10990388B2公开(公告)日: 2021-04-27
- 发明人: Hyun Pil Kim , Hyun Woo Sim , Seong Woo Ahn
- 申请人: SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Volentine, Whitt & Francos, PLLC
- 优先权: KR10-2017-0042125 20170331
- 主分类号: G06F9/30
- IPC分类号: G06F9/30 ; G06F1/3287 ; G06T1/20
摘要:
A semiconductor device including a first processor having a first register, the first processor configured to perform region of interest (ROI) calculations using the first register; and a second processor having a second register, the second processor configured to perform arithmetic calculations using the second register. The first register is shared with the second processor, and the second register is shared with the first processor.
信息查询