Invention Grant
- Patent Title: Surface finishes for high density interconnect architectures
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Application No.: US16561974Application Date: 2019-09-05
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Publication No.: US10998282B2Publication Date: 2021-05-04
- Inventor: David Unruh , Srinivas V. Pietambaram
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L23/00
- IPC: H01L23/00

Abstract:
An electroless nickel, electroless palladium, electroless tin stack and associated methods are shown. An example method to form a solder bump may include forming a layer of a second material over a first material at a base of a trench in a solder resist layer. The first material includes nickel and the second material includes palladium. The method further includes depositing a third material that includes tin on the second material using an electroless deposition process, and forming a solder bump out of the third material using a reflow and deflux process.
Public/Granted literature
- US20190393178A1 SURFACE FINISHES FOR HIGH DENSITY INTERCONNECT ARCHITECTURES Public/Granted day:2019-12-26
Information query
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