Invention Grant
- Patent Title: Ohmic contacts for semiconductor structures
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Application No.: US16592425Application Date: 2019-10-03
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Publication No.: US10998481B2Publication Date: 2021-05-04
- Inventor: Yongjun Jeff Hu , John Mark Meldrim , Shanming Mou , Everett Allen McTeer
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L33/62
- IPC: H01L33/62 ; H01L33/40 ; H01L33/00 ; H01L33/32 ; H01L33/46
Abstract:
A composition and method for formation of ohmic contacts on a semiconductor structure are provided. The composition includes a TiAlxNy material at least partially contiguous with the semiconductor structure. The TiAlxNy material can be TiAl3. The composition can include an aluminum material, the aluminum material being contiguous to at least part of the TiAlxNy material, such that the TiAlxNy material is between the aluminum material and the semiconductor structure. The method includes annealing the composition to form an ohmic contact on the semiconductor structure.
Public/Granted literature
- US20200035891A1 OHMIC CONTACTS FOR SEMICONDUCTOR STRUCTURES Public/Granted day:2020-01-30
Information query
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