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公开(公告)号：US20210257526A1
公开(公告)日：2021-08-19
申请号：US17223732
申请日：2021-04-06
Applicant: Micron Technology, Inc.
Inventor： Yongjun Jeff Hu , John Mark Meldrim , Shanming Mou , Everett Allen McTeer
Abstract: A composition and method for formation of ohmic contacts on a semiconductor structure are provided. The composition includes a TiAlxNy material at least partially contiguous with the semiconductor structure. The TiAlxNy material can be TiAl3. The composition can include an aluminum material, the aluminum material being contiguous to at least part of the TiAlxNy material, such that the TiAlxNy material is between the aluminum material and the semiconductor structure. The method includes annealing the composition to form an ohmic contact on the semiconductor structure.
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公开(公告)号：US20170117449A1
公开(公告)日：2017-04-27
申请号：US15399372
申请日：2017-01-05
Applicant: Micron Technology, Inc.
Inventor： Yongjun Jeff Hu , John Mark Meldrim , Shanming Mou , Everett Allen McTeer
CPC classification number: H01L33/62 , H01L33/0066 , H01L33/0075 , H01L33/32 , H01L33/40 , H01L33/46 , H01L2924/0002 , H01L2933/0016 , H01L2933/0066 , H01L2924/00
Abstract: A composition and method for formation of ohmic contacts on a semiconductor structure are provided. The composition includes a TiAlxNy material at least partially contiguous with the semiconductor structure. The TiAlxNy material can be TiAl3. The composition can include an aluminum material, the aluminum material being contiguous to at least part of the TiAlxNy material, such that the TiAlxNy material is between the aluminum material and the semiconductor structure. The method includes annealing the composition to form an ohmic contact on the semiconductor structure.
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Patent Agency Ranking
公开(公告)号：US09608185B2
公开(公告)日：2017-03-28
申请号：US14261901
申请日：2014-04-25
Applicant: Micron Technology, Inc.
Inventor： Yongjun Jeff Hu , John Mark Meldrim , Shanming Mou , Everett Allen McTeer
CPC classification number: H01L33/62 , H01L33/0066 , H01L33/0075 , H01L33/32 , H01L33/40 , H01L33/46 , H01L2924/0002 , H01L2933/0016 , H01L2933/0066 , H01L2924/00
Abstract: A composition and method for formation of ohmic contacts on a semiconductor structure are provided. The composition includes a TiAlxNy material at least partially contiguous with the semiconductor structure. The TiAlxNy material can be TiAl3. The composition can include an aluminum material, the aluminum material being contiguous to at least part of the TiAlxNy material, such that the TiAlxNy material is between the aluminum material and the semiconductor structure. The method includes annealing the composition to form an ohmic contact on the semiconductor structure.
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公开(公告)号：US20140234996A1
公开(公告)日：2014-08-21
申请号：US14261901
申请日：2014-04-25
Applicant: Micron Technology, Inc.
Inventor： Yongjun Jeff Hu , John Mark Meldrim , Shanming Mou , Everett Allen McTeer
IPC: H01L33/62
CPC classification number: H01L33/62 , H01L33/0066 , H01L33/0075 , H01L33/32 , H01L33/40 , H01L33/46 , H01L2924/0002 , H01L2933/0016 , H01L2933/0066 , H01L2924/00
Abstract: A composition and method for formation of ohmic contacts on a semiconductor structure are provided. The composition includes a TiAlxNy material at least partially contiguous with the semiconductor structure. The TiAlxNy material can be TiAl3. The composition can include an aluminum material, the aluminum material being contiguous to at least part of the TiAlxNy material, such that the TiAlxNy material is between the aluminum material and the semiconductor structure. The method includes annealing the composition to form an ohmic contact on the semiconductor structure.
Abstract translation: 提供了一种在半导体结构上形成欧姆接触的组合物和方法。 该组合物包括与半导体结构至少部分邻接的TiAl x N y材料。 TiAlxNy材料可以是TiAl3。 组合物可以包括铝材料，铝材料与TiAl x N y材料的至少一部分相邻，使得TiAl x N y材料在铝材料和半导体结构之间。 该方法包括退火组合物以在半导体结构上形成欧姆接触。
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公开(公告)号：US10446727B2
公开(公告)日：2019-10-15
申请号：US15399372
申请日：2017-01-05
Applicant: Micron Technology, Inc.
Inventor： Yongjun Jeff Hu , John Mark Meldrim , Shanming Mou , Everett Allen McTeer
Abstract: A composition and method for formation of ohmic contacts on a semiconductor structure are provided. The composition includes a TiAlxNy material at least partially contiguous with the semiconductor structure. The TiAlxNy material can be TiAl3. The composition can include an aluminum material, the aluminum material being contiguous to at least part of the TiAlxNy material, such that the TiAlxNy material is between the aluminum material and the semiconductor structure. The method includes annealing the composition to form an ohmic contact on the semiconductor structure.
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公开(公告)号：US10998481B2
公开(公告)日：2021-05-04
申请号：US16592425
申请日：2019-10-03
Applicant: Micron Technology, Inc.
Inventor： Yongjun Jeff Hu , John Mark Meldrim , Shanming Mou , Everett Allen McTeer
Abstract: A composition and method for formation of ohmic contacts on a semiconductor structure are provided. The composition includes a TiAlxNy material at least partially contiguous with the semiconductor structure. The TiAlxNy material can be TiAl3. The composition can include an aluminum material, the aluminum material being contiguous to at least part of the TiAlxNy material, such that the TiAlxNy material is between the aluminum material and the semiconductor structure. The method includes annealing the composition to form an ohmic contact on the semiconductor structure.
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公开(公告)号：US20200035891A1
公开(公告)日：2020-01-30
申请号：US16592425
申请日：2019-10-03
Applicant: Micron Technology, Inc.
Inventor： Yongjun Jeff Hu , John Mark Meldrim , Shanming Mou , Everett Allen McTeer
Abstract: A composition and method for formation of ohmic contacts on a semiconductor structure are provided. The composition includes a TiAlxNy material at least partially contiguous with the semiconductor structure. The TiAlxNy material can be TiAl3. The composition can include an aluminum material, the aluminum material being contiguous to at least part of the TiAlxNy material, such that the TiAlxNy material is between the aluminum material and the semiconductor structure. The method includes annealing the composition to form an ohmic contact on the semiconductor structure.
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