Invention Grant
- Patent Title: PVD titanium dioxide formation using sputter etch to halt onset of crystalinity in thick films
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Application No.: US16258766Application Date: 2019-01-28
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Publication No.: US11008647B2Publication Date: 2021-05-18
- Inventor: Karl Armstrong , Jinxin Fu
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan LLP
- Main IPC: C23C14/08
- IPC: C23C14/08 ; C23C14/34 ; C23C14/58 ; C23C14/00
Abstract:
Embodiments described herein provide methods of forming amorphous or nano-crystalline ceramic films. The methods include depositing a ceramic layer on a substrate using a physical vapor deposition (PVD) process, discontinuing the PVD process when the ceramic layer has a predetermined layer thickness, sputter etching the ceramic layer for a predetermined period of time, and repeating the depositing the ceramic layer using the PVD process, the discontinuing the PVD process, and the sputter etching the ceramic layer until a ceramic film with a predetermined film thickness is formed.
Public/Granted literature
- US20190256967A1 PVD TITANIUM DIOXIDE FORMATION USING SPUTTER ETCH TO HALT ONSET OF CRYSTALINITY IN THICK FILMS Public/Granted day:2019-08-22
Information query
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