Invention Grant
- Patent Title: Hybrid oxide/metal cap layer for boron-free free layer
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Application No.: US16194248Application Date: 2018-11-16
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Publication No.: US11009570B2Publication Date: 2021-05-18
- Inventor: Ikhtiar , Xueti Tang , Mohamad Krounbi
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Lewis Roca Rothgerber Christie LLP
- Main IPC: G01R33/09
- IPC: G01R33/09 ; H01F10/32 ; H01L43/10 ; H01L43/12 ; H01L43/08 ; H01F41/30

Abstract:
A magnetic tunnel junction stack includes: a pinned layer; a main oxide barrier layer on the pinned layer; a free layer on the main oxide barrier layer; and a hybrid oxide/metal cap layer on the free layer. The hybrid oxide/metal cap layer includes: a first oxide layer on the free layer; a second oxide layer on the first oxide layer; and a metallic cap layer on the second oxide layer, wherein the free layer is free of boron (B).
Public/Granted literature
- US20200158796A1 HYBRID OXIDE/METAL CAP LAYER FOR BORON-FREE FREE LAYER Public/Granted day:2020-05-21
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