公开(公告)号：US12274179B2

公开(公告)日：2025-04-08

申请号：US17807485

申请日：2022-06-17

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  Samsung Electronics Co., Ltd.

Inventor： Panagiotis Charilaos Filippou ,  Chirag Garg ,  See-Hun Yang ,  Mahesh Samant ,  Ikhtiar ,  Jaewoo Jeong

IPC: H10N50/80 ,  H10B61/00 ,  H10N50/01 ,  H10N50/85

Abstract: A magnetic random access memory (MRAM) stack, a method of fabricating a MRAM stack, a MRAM array, and a computer system. The MRAM stack includes a first magnetic layer comprising a Heusler compound. The MRAM stack also includes one or more seed layers including a templating structure having a crystalline structure configured to template the Heusler compound. The magnetic layer is formed over the templating structure. The MRAM stack also includes a chromium (Cr) layer formed under the templating structure. The Cr layer is configured to enhance a tunnel magnetoresistance (TMR) of the MRAM stack.

公开(公告)号：US11776726B2

公开(公告)日：2023-10-03

申请号：US17127695

申请日：2020-12-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dmytro Apalkov ,  Jaewoo Jeong ,  Ikhtiar ,  Roman Chepulskyy

IPC: H01F10/32 ,  G11C11/16 ,  H10N50/01 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

CPC classification number: H01F10/3286 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/329 ,  H10N50/01 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

Abstract: A magnetic device is described. The magnetic device includes a magnetic junction, a spin-orbit interaction (SO) line and a dipole-coupled layer. The magnetic junction includes a free layer. The SO line is adjacent to the free layer, carries a current in-plane and exerts a SO torque on the free layer due to the current passing through the SO line. The free layer being switchable between stable magnetic states using the SO torque. The SO line is between the free layer and the dipole-coupled layer. The dipole-coupled layer is magnetically coupled to the free layer. At least one of the free layer and the dipole-coupled layer has a damping of greater than 0.02.

公开(公告)号：US20190157547A1

公开(公告)日：2019-05-23

申请号：US15890101

申请日：2018-02-06

Applicant: Samsung Electronics Co., LTD.

Inventor： Ikhtiar ,  Xueti Tang ,  Mohamad Towfik Krounbi

IPC: H01L43/12 ,  H01L43/08 ,  G11C11/16 ,  H01F10/10 ,  H01F41/14 ,  H01L27/22

Abstract: A magnetic junction and method for providing the magnetic junction are described. The method includes providing a pinned layer, a nonmagnetic spacer layer and a free layer switchable between stable magnetic states. The nonmagnetic spacer layer is between the pinned and free layers. Providing the pinned layer and/or providing the free layer includes cooling a portion of the magnetic junction, depositing a wetting layer while the portion of the magnetic junction is cooled, oxidizing/nitriding the wetting layer and depositing a boron-free magnetic layer on the oxide/nitride wetting layer. The portion of the magnetic junction is cooled to within a temperature range including temperature(s) not greater than 250 K. The wetting layer has a thickness of at least 0.25 and not more than three monolayers. The wetting layer includes at least one magnetic material. The boron-free magnetic layer has a perpendicular magnetic anisotropy energy greater than an out-of-plane demagnetization energy.

公开(公告)号：US20210159402A1

公开(公告)日：2021-05-27

申请号：US16800779

申请日：2020-02-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ikhtiar ,  Jaewoo Jeong ,  Mohamad Towfik Krounbi ,  Xueti Tang

IPC: H01L43/10 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic junction usable in a magnetic device is described. The magnetic junction includes a free layer and an oxide interlayer on the free layer. The oxide interlayer includes at least one glass-forming agent. In some aspects, the magnetic junction includes a reference layer and a nonmagnetic spacer layer being between the reference layer and the free layer. The free layer is between the nonmagnetic spacer layer and the oxide interlayer.

公开(公告)号：US11009570B2

公开(公告)日：2021-05-18

申请号：US16194248

申请日：2018-11-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ikhtiar ,  Xueti Tang ,  Mohamad Krounbi

IPC: G01R33/09 ,  H01F10/32 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08 ,  H01F41/30

Abstract: A magnetic tunnel junction stack includes: a pinned layer; a main oxide barrier layer on the pinned layer; a free layer on the main oxide barrier layer; and a hybrid oxide/metal cap layer on the free layer. The hybrid oxide/metal cap layer includes: a first oxide layer on the free layer; a second oxide layer on the first oxide layer; and a metallic cap layer on the second oxide layer, wherein the free layer is free of boron (B).

公开(公告)号：US10553642B2

公开(公告)日：2020-02-04

申请号：US15787524

申请日：2017-10-18

Applicant: Samsung Electronics Co., LTD.

Inventor： Don Koun Lee ,  Mohamad Towfik Krounbi ,  Xueti Tang ,  Gen Feng ,  Ikhtiar

IPC: H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22 ,  G11B5/39 ,  G11C11/16

Abstract: A magnetic junction, a memory using the magnetic junction and method for providing the magnetic junction are described. The magnetic junction resides on a substrate and is usable in a magnetic device. The magnetic junction includes a reference layer, a nonmagnetic spacer layer and a M-containing oxide layer adjacent to the free layer. M includes at least one of Ti, Al, Hf, Zr, Mo, V and Nb. The free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. The nonmagnetic spacer layer is between the reference layer and the free layer. The free layer is between the nonmagnetic spacer layer and the M-containing oxide layer.

公开(公告)号：US20240023458A1

公开(公告)日：2024-01-18

申请号：US17887042

申请日：2022-08-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dmytro Apalkov ,  Jaewoo Jeong ,  Ikhtiar

IPC: H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22

CPC classification number: H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L27/222

Abstract: A spin-orbit torque magnetic random-access memory (SOT-MRAM) device includes a substrate, a spin orbit torque line above the substrate, a composite-metal-oxide seed layer above the spin orbit torque line, and a magnetic tunnel junction above the composite-metal-oxide seed layer. The magnetic tunnel junction includes a free layer above the composite-metal-oxide seed layer, a main tunneling barrier layer above the free layer, and a pinned layer above the main tunneling barrier layer.

公开(公告)号：US20220068538A1

公开(公告)日：2022-03-03

申请号：US17127695

申请日：2020-12-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dmytro Apalkov ,  Jaewoo Jeong ,  Ikhtiar ,  Roman Chepulskyy

IPC: H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  H01L43/02 ,  G11C11/16

Abstract: A magnetic device is described. The magnetic device includes a magnetic junction, a spin-orbit interaction (SO) line and a dipole-coupled layer. The magnetic junction includes a free layer. The SO line is adjacent to the free layer, carries a current in-plane and exerts a SO torque on the free layer due to the current passing through the SO line. The free layer being switchable between stable magnetic states using the SO torque. The SO line is between the free layer and the dipole-coupled layer. The dipole-coupled layer is magnetically coupled to the free layer. At least one of the free layer and the dipole-coupled layer has a damping of greater than 0.02.

公开(公告)号：US10283701B1

公开(公告)日：2019-05-07

申请号：US15890101

申请日：2018-02-06

Applicant: Samsung Electronics Co., LTD.

Inventor： Ikhtiar ,  Xueti Tang ,  Mohamad Towfik Krounbi

IPC: H01L43/12 ,  H01L43/08 ,  H01L27/12 ,  H01F10/10 ,  H01F41/14 ,  G11C11/16

Abstract: A magnetic junction and method for providing the magnetic junction are described. The method includes providing a pinned layer, a nonmagnetic spacer layer and a free layer switchable between stable magnetic states. The nonmagnetic spacer layer is between the pinned and free layers. Providing the pinned layer and/or providing the free layer includes cooling a portion of the magnetic junction, depositing a wetting layer while the portion of the magnetic junction is cooled, oxidizing/nitriding the wetting layer and depositing a boron-free magnetic layer on the oxide/nitride wetting layer. The portion of the magnetic junction is cooled to within a temperature range including temperature(s) not greater than 250 K. The wetting layer has a thickness of at least 0.25 and not more than three monolayers. The wetting layer includes at least one magnetic material. The boron-free magnetic layer has a perpendicular magnetic anisotropy energy greater than an out-of-plane demagnetization energy.

公开(公告)号：US20190067366A1

公开(公告)日：2019-02-28

申请号：US15787524

申请日：2017-10-18

Applicant: Samsung Electronics Co., LTD.

Inventor： Don Koun Lee ,  Mohamad Towfik Krounbi ,  Xueti Tang ,  Gen Feng ,  Ikhtiar

IPC: H01L27/22 ,  H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  G11C11/16

Abstract: A magnetic junction, a memory using the magnetic junction and method for providing the magnetic junction are described. The magnetic junction resides on a substrate and is usable in a magnetic device. The magnetic junction includes a reference layer, a nonmagnetic spacer layer and a M-containing oxide layer adjacent to the free layer. M includes at least one of Ti, Al, Hf, Zr, Mo, V and Nb. The free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. The nonmagnetic spacer layer is between the reference layer and the free layer. The free layer is between the nonmagnetic spacer layer and the M-containing oxide layer.