- 专利标题: Semiconductor arrangement with capacitor
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申请号: US16014008申请日: 2018-06-21
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公开(公告)号: US11011524B2公开(公告)日: 2021-05-18
- 发明人: Chern-Yow Hsu , Chen-Jong Wang , Chia-Shiung Tsai , Shih-Chang Liu , Xiaomeng Chen
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- 申请人地址: TW Hsin-Chu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Cooper Legal Group, LLC
- 主分类号: H01L27/108
- IPC分类号: H01L27/108 ; H01L49/02 ; H01L21/768
摘要:
A semiconductor arrangement includes a logic region and a memory region. The memory region has an active region that includes a semiconductor device. The memory region also has a capacitor within one or more dielectric layers over the active region, where the capacitor is over the semiconductor device. The semiconductor arrangement also includes a protective ring within at least one of the logic region or the memory region and that separates the logic region from the memory region. The capacitor has a first electrode, a second electrode and an insulating layer between the first electrode and the second electrode, where the first electrode is substantially larger than other portions of the capacitor.
公开/授权文献
- US20180315760A1 SEMICONDUCTOR ARRANGEMENT WITH CAPACITOR 公开/授权日:2018-11-01
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