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公开(公告)号:US11011524B2
公开(公告)日:2021-05-18
申请号:US16014008
申请日:2018-06-21
IPC分类号: H01L27/108 , H01L49/02 , H01L21/768
摘要: A semiconductor arrangement includes a logic region and a memory region. The memory region has an active region that includes a semiconductor device. The memory region also has a capacitor within one or more dielectric layers over the active region, where the capacitor is over the semiconductor device. The semiconductor arrangement also includes a protective ring within at least one of the logic region or the memory region and that separates the logic region from the memory region. The capacitor has a first electrode, a second electrode and an insulating layer between the first electrode and the second electrode, where the first electrode is substantially larger than other portions of the capacitor.
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公开(公告)号:US20180315760A1
公开(公告)日:2018-11-01
申请号:US16014008
申请日:2018-06-21
IPC分类号: H01L27/108 , H01L49/02 , H01L21/768
CPC分类号: H01L27/10894 , H01L21/76877 , H01L27/10814 , H01L27/1085 , H01L27/10897 , H01L28/90
摘要: A semiconductor arrangement includes a logic region and a memory region. The memory region has an active region that includes a semiconductor device. The memory region also has a capacitor within one or more dielectric layers over the active region, where the capacitor is over the semiconductor device. The semiconductor arrangement also includes a protective ring within at least one of the logic region or the memory region and that separates the logic region from the memory region. The capacitor has a first electrode, a second electrode and an insulating layer between the first electrode and the second electrode, where the first electrode is substantially larger than other portions of the capacitor.
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公开(公告)号:US09825040B2
公开(公告)日:2017-11-21
申请号:US14144676
申请日:2013-12-31
发明人: Chern-Yow Hsu , Ming Chyi Liu , Shih-Chang Liu , Chia-Shiung Tsai , Xiaomeng Chen , Chen-Jong Wang
IPC分类号: H01L27/108 , H01L49/02
CPC分类号: H01L27/10814 , H01L27/10852 , H01L28/90
摘要: A semiconductor arrangement includes an active region including a semiconductor device. The semiconductor arrangement includes a capacitor. The capacitor includes a first electrode over at least one dielectric layer over the active region. The first electrode surrounds an open space within the capacitor. The first electrode has a non-linear first electrode sidewall.
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公开(公告)号:US09299768B2
公开(公告)日:2016-03-29
申请号:US14046987
申请日:2013-10-06
发明人: Xiaomeng Chen , Zhiqiang Wu , Shih-Chang Liu , Chien-Hong Chen
IPC分类号: H01L29/06 , H01L29/78 , H01L21/336 , H01L21/76 , H01L29/76 , H01L21/00 , H01L21/20 , H01L29/04 , H01L21/762 , H01L29/66
CPC分类号: H01L21/30604 , H01L21/3083 , H01L21/76224 , H01L29/045 , H01L29/0673 , H01L29/161 , H01L29/66537 , H01L29/66795 , H01L29/7853
摘要: A semiconductor device includes a channel having a first linear surface and a first non-linear surface. The first non-linear surface defines a first external angle of about 80 degrees to about 100 degrees and a second external angle of about 80 degrees to about 100 degrees. The semiconductor device includes a dielectric region covering the channel between a source region and a drain region. The semiconductor device includes a gate electrode covering the dielectric region between the source region and the drain region.
摘要翻译: 半导体器件包括具有第一线性表面和第一非线性表面的通道。 第一非线性表面限定约80度至约100度的第一外角和约80度至约100度的第二外角。 半导体器件包括覆盖源极区域和漏极区域之间的沟道的电介质区域。 半导体器件包括覆盖源极区域和漏极区域之间的电介质区域的栅电极。
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公开(公告)号:US20150145100A1
公开(公告)日:2015-05-28
申请号:US14087005
申请日:2013-11-22
IPC分类号: H01L27/108
CPC分类号: H01L27/10894 , H01L21/76877 , H01L27/10814 , H01L27/1085 , H01L27/10897 , H01L28/90
摘要: A semiconductor arrangement includes a logic region and a memory region. The memory region has an active region that includes a semiconductor device. The memory region also has a capacitor within one or more dielectric layers over the active region, where the capacitor is over the semiconductor device. The semiconductor arrangement also includes a protective ring within at least one of the logic region or the memory region and that separates the logic region from the memory region. The capacitor has a first electrode, a second electrode and an insulating layer between the first electrode and the second electrode, where the first electrode is substantially larger than other portions of the capacitor.
摘要翻译: 半导体装置包括逻辑区和存储区。 存储区具有包括半导体器件的有源区。 存储区域还在有源区域上的一个或多个电介质层内具有电容器,其中电容器在半导体器件上方。 半导体装置还包括至少一个逻辑区域或存储区域内的保护环,并且将逻辑区域与存储区域分开。 电容器在第一电极和第二电极之间具有第一电极,第二电极和绝缘层,其中第一电极基本上大于电容器的其它部分。
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公开(公告)号:US20150097218A1
公开(公告)日:2015-04-09
申请号:US14046985
申请日:2013-10-06
发明人: Xiaomeng Chen , Zhiqiang Wu , Shih-Chang Liu , Chien-Hong Chen
CPC分类号: H01L29/1033 , H01L29/045 , H01L29/0673 , H01L29/42392 , H01L29/66772 , H01L29/66787 , H01L29/785 , H01L29/7853 , H01L29/78696
摘要: A semiconductor device includes a first channel having a first linear surface and a first non-linear surface. The semiconductor device includes a first dielectric region surrounding the first channel. The semiconductor device includes a second channel having a third linear surface and a third non-linear surface. The semiconductor device includes a second dielectric region surrounding the second channel. The semiconductor device includes a gate electrode surrounding the first dielectric region and the second dielectric region.
摘要翻译: 半导体器件包括具有第一线性表面和第一非线性表面的第一通道。 半导体器件包括围绕第一通道的第一电介质区域。 半导体器件包括具有第三线性表面和第三非线性表面的第二通道。 半导体器件包括围绕第二通道的第二电介质区域。 半导体器件包括围绕第一电介质区域和第二电介质区域的栅电极。
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公开(公告)号:US20210272964A1
公开(公告)日:2021-09-02
申请号:US17321590
申请日:2021-05-17
IPC分类号: H01L27/108 , H01L49/02 , H01L21/768
摘要: A semiconductor arrangement includes a logic region and a memory region. The memory region has an active region that includes a semiconductor device. The memory region also has a capacitor within one or more dielectric layers over the active region, where the capacitor is over the semiconductor device. The semiconductor arrangement also includes a protective ring within at least one of the logic region or the memory region and that separates the logic region from the memory region. The capacitor has a first electrode, a second electrode and an insulating layer between the first electrode and the second electrode, where the first electrode is substantially larger than other portions of the capacitor.
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公开(公告)号:US10269807B2
公开(公告)日:2019-04-23
申请号:US15830060
申请日:2017-12-04
IPC分类号: H01L27/108 , H01L49/02 , H01L21/311 , H01L21/3213
摘要: A semiconductor arrangement includes an active region including a semiconductor device. The semiconductor arrangement includes a capacitor having a first electrode layer, a second electrode layer, and an insulating layer between the first electrode layer and the second electrode layer. At least three dielectric layers are between a bottom surface of the capacitor and the active region.
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公开(公告)号:US09978754B2
公开(公告)日:2018-05-22
申请号:US15412115
申请日:2017-01-23
IPC分类号: H01L21/02 , H01L27/108
CPC分类号: H01L27/10894 , H01L23/5223 , H01L23/585 , H01L27/10814 , H01L27/10817 , H01L27/10852 , H01L27/10855 , H01L27/10897 , H01L28/87 , H01L28/91 , H01L2924/0002 , H01L2924/1431 , H01L2924/1434 , H01L2924/00
摘要: A semiconductor arrangement includes a logic region and a memory region. The memory region has an active region that includes a semiconductor device. The memory region also has a capacitor within one or more dielectric layers over the active region. The semiconductor arrangement includes a protective ring within at least one of the logic region or the memory region and that separates the logic region from the memory region. The capacitor has a first electrode, a second electrode and an insulating layer between the first electrode and the second electrode, where an electrode unit of the first electrode has a first portion and a second portion, and where the second portion is above the first portion and is wider than the first portion.
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公开(公告)号:US09553096B2
公开(公告)日:2017-01-24
申请号:US14087009
申请日:2013-11-22
IPC分类号: H01L21/02 , H01L27/108 , H01L23/58 , H01L49/02 , H01L23/522
CPC分类号: H01L27/10894 , H01L23/5223 , H01L23/585 , H01L27/10814 , H01L27/10817 , H01L27/10852 , H01L27/10855 , H01L27/10897 , H01L28/87 , H01L28/91 , H01L2924/0002 , H01L2924/1431 , H01L2924/1434 , H01L2924/00
摘要: A semiconductor arrangement includes a logic region and a memory region. The memory region has an active region that includes a semiconductor device. The memory region also has a capacitor within one or more dielectric layers over the active region. The semiconductor arrangement includes a protective ring within at least one of the logic region or the memory region and that separates the logic region from the memory region. The capacitor has a first electrode, a second electrode and an insulating layer between the first electrode and the second electrode, where an electrode unit of the first electrode has a first portion and a second portion, and where the second portion is above the first portion and is wider than the first portion.
摘要翻译: 半导体装置包括逻辑区和存储区。 存储区具有包括半导体器件的有源区。 存储区域还在活性区域上的一个或多个电介质层内具有电容器。 半导体装置包括至少一个逻辑区域或存储区域内的保护环,并且将逻辑区域与存储区域分开。 电容器在第一电极和第二电极之间具有第一电极,第二电极和绝缘层,其中第一电极的电极单元具有第一部分和第二部分,并且其中第二部分在第一部分之上 并且比第一部分宽。
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