Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15464773Application Date: 2017-03-21
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Publication No.: US11018085B2Publication Date: 2021-05-25
- Inventor: Naoya Inoue , Dong Won Kim , Young Woo Cho , Ji Won Kang , Song Yi Han
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Lee IP Law, P.C.
- Priority: KR10-2016-0034031 20160322
- Main IPC: H01L29/51
- IPC: H01L29/51 ; H01L23/522 ; H01L21/768 ; H01L23/532

Abstract:
A semiconductor device includes a first lower line and a second lower line on a substrate, the first and second lower lines extending in a first direction, being adjacent to each other, and being spaced apart along a second direction, orthogonal the first direction, an airgap between the first and second lower lines and spaced therefrom along the second direction, a first insulating spacer on a side wall of the first lower line facing the second lower line, wherein a distance from the first airgap to the first lower line along the second direction is equal to or greater than an overlay specification of a design rule of the semiconductor device, and a second insulating spacer between the airgap and the second lower line.
Public/Granted literature
- US20170278786A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-09-28
Information query
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