公开(公告)号：US11018085B2

公开(公告)日：2021-05-25

申请号：US15464773

申请日：2017-03-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Naoya Inoue ,  Dong Won Kim ,  Young Woo Cho ,  Ji Won Kang ,  Song Yi Han

IPC: H01L29/51 ,  H01L23/522 ,  H01L21/768 ,  H01L23/532

Abstract: A semiconductor device includes a first lower line and a second lower line on a substrate, the first and second lower lines extending in a first direction, being adjacent to each other, and being spaced apart along a second direction, orthogonal the first direction, an airgap between the first and second lower lines and spaced therefrom along the second direction, a first insulating spacer on a side wall of the first lower line facing the second lower line, wherein a distance from the first airgap to the first lower line along the second direction is equal to or greater than an overlay specification of a design rule of the semiconductor device, and a second insulating spacer between the airgap and the second lower line.

公开(公告)号：US12142558B2

公开(公告)日：2024-11-12

申请号：US17242548

申请日：2021-04-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Naoya Inoue ,  Dong Won Kim ,  Young Woo Cho ,  Ji Won Kang ,  Song Yi Han

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: A semiconductor device includes a first lower line and a second lower line on a substrate, the first and second lower lines extending in a first direction, being adjacent to each other, and being spaced apart along a second direction, orthogonal the first direction, an airgap between the first and second lower lines and spaced therefrom along the second direction, a first insulating spacer on a side wall of the first lower line facing the second lower line, wherein a distance from the first airgap to the first lower line along the second direction is equal to or greater than an overlay specification of a design rule of the semiconductor device, and a second insulating spacer between the airgap and the second lower line.