Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US15627568Application Date: 2017-06-20
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Publication No.: US11018243B2Publication Date: 2021-05-25
- Inventor: Blandine Duriez , Martin Christopher Holland , Georgios Vellianitis , Mark Van Dal
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch LLP
- Main IPC: H01L29/775
- IPC: H01L29/775 ; H01L29/80 ; H01L29/66 ; H01L29/06 ; H01L29/423 ; H01L29/786 ; B82Y10/00 ; H01L29/417 ; H01L29/08
Abstract:
A semiconductor device includes a substrate, a gate structure, a plurality of nanowires, a sacrificial material, and an epitaxy structure. The gate structure is disposed on and in contact with the substrate. The nanowires extend through the gate structure. The sacrificial material is separated from the gate structure. The epitaxy structure is in contact with the nanowires, is separated from the substrate, and surrounds the sacrificial material.
Public/Granted literature
- US20180315833A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2018-11-01
Information query
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