Invention Grant
- Patent Title: Memory system including DRAM cache and cache management method thereof
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Application No.: US16519487Application Date: 2019-07-23
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Publication No.: US11023396B2Publication Date: 2021-06-01
- Inventor: Sungup Moon , Tae-Kyeong Ko , Do-Han Kim , Jongmin Park , Kyoyeon Won
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2015-0190027 20151230
- Main IPC: G06F13/16
- IPC: G06F13/16 ; G06F12/0804 ; G06F13/40 ; G06F12/0868

Abstract:
A memory system includes a nonvolatile memory electrically connected to a data bus, a DRAM electrically connected to the data bus, and a memory controller configured to drive the DRAM as a cache memory and the nonvolatile memory as a main memory and to synchronize data of a cache line with data of the nonvolatile memory in units of cache units based on a dirty flag. The DRAM is configured to load data of the cache line that caches data stored in the nonvolatile memory and to store the dirty flag, which indicates whether a cache unit is dirty, in units of cache units, where a size of each cache unit is smaller than a size of the cache line.
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