Invention Grant
- Patent Title: Static random access memory with write assist adjustment
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Application No.: US16587504Application Date: 2019-09-30
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Publication No.: US11024370B2Publication Date: 2021-06-01
- Inventor: Kian-Long Lim , Chia-Hao Pao
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Sterne, Kessler, Goldstein & Fox. P.L.L.C.
- Main IPC: G11C11/419
- IPC: G11C11/419 ; G11C11/412 ; G11C11/418

Abstract:
The present disclosure describes embodiments of a write assist circuit. The write assist circuit can include a boost circuit configured to output a first negative voltage at a first output terminal, and an adjustment circuit configured to couple the first negative voltage to a second negative voltage higher than the first negative voltage. The adjustment circuit can include a transistor, and a second output terminal electrically connected to the first output terminal. The transistor can include a first source/drain terminal, a second source/drain terminal, and a gate terminal. The first source/drain terminal can be electrically coupled to the second output terminal. The second source/drain terminal can be electrically connected to a voltage source. The gate terminal can be electrically connected to a ground voltage supply.
Public/Granted literature
- US20210098055A1 STATIC RANDOM ACCESS MEMORY WITH WRITE ASSIST ADJUSTMENT Public/Granted day:2021-04-01
Information query
IPC分类: