Invention Grant
- Patent Title: Semiconductor package structure having vapor chamber thermally connected to a surface of the semiconductor die
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Application No.: US16566495Application Date: 2019-09-10
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Publication No.: US11024557B2Publication Date: 2021-06-01
- Inventor: Hsin-En Chen , Ian Hu , Jin-Feng Yang
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaohsiung
- Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee Address: TW Kaohsiung
- Agency: Foley & Lardner LLP
- Main IPC: H01L23/427
- IPC: H01L23/427 ; H01L23/00

Abstract:
A semiconductor package structure includes a package substrate, a semiconductor die, a vapor chamber and a heat dissipating device. The package substrate has a first surface and a second surface opposite to the first surface. The semiconductor die is electrically connected to the first surface of the package substrate. The vapor chamber is thermally connected to a first surface of the semiconductor die. The vapor chamber defines an enclosed chamber for accommodating a first working liquid. The heat dissipating device is thermally connected to the vapor chamber. The heat dissipating device defines a substantially enclosed space for accommodating a second working liquid.
Public/Granted literature
- US20200091036A1 SEMICONDUCTOR PACKAGE STRUCTURE Public/Granted day:2020-03-19
Information query
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