A plasma processing apparatus includes a cooling plate having a fixing surface to which an upper electrode is fixed, the cooling plate having, on the fixing surface, an electrostatic chuck configured to attract the upper electrode by an attraction force generated by an applied voltage; a power supply configured to apply the voltage to the electrostatic chuck; and a power supply controller configured to control the power supply such that an absolute value of the voltage applied to the electrostatic chuck is increased based on a degree of consumption of the upper electrode.