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公开(公告)号：US11825589B2
公开(公告)日：2023-11-21
申请号：US17314486
申请日：2021-05-07
Applicant: Tokyo Electron Limited
Inventor： Yohei Uchida , Tetsuji Sato , Shojiro Yahata , Taira Takase
CPC classification number: H05H1/28 , H01J37/32027 , H05H1/2418
Abstract: A plasma processing apparatus includes a cooling plate having a fixing surface to which an upper electrode is fixed, the cooling plate having, on the fixing surface, an electrostatic chuck configured to attract the upper electrode by an attraction force generated by an applied voltage; a power supply configured to apply the voltage to the electrostatic chuck; and a power supply controller configured to control the power supply such that an absolute value of the voltage applied to the electrostatic chuck is increased based on a degree of consumption of the upper electrode.
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公开(公告)号：US20210267042A1
公开(公告)日：2021-08-26
申请号：US17314486
申请日：2021-05-07
Applicant: Tokyo Electron Limited
Inventor： Yohei Uchida , Tetsuji Sato , Shojiro Yahata , Taira Takase
Abstract: A plasma processing apparatus includes a cooling plate having a fixing surface to which an upper electrode is fixed, the cooling plate having, on the fixing surface, an electrostatic chuck configured to attract the upper electrode by an attraction force generated by an applied voltage; a power supply configured to apply the voltage to the electrostatic chuck; and a power supply controller configured to control the power supply such that an absolute value of the voltage applied to the electrostatic chuck is increased based on a degree of consumption of the upper electrode.
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公开(公告)号：US11961718B2
公开(公告)日：2024-04-16
申请号：US17186711
申请日：2021-02-26
Applicant: Tokyo Electron Limited
Inventor： Shojiro Yahata , Tetsuji Sato
CPC classification number: H01J37/32724 , H01J37/32091 , H01J37/32431 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32532 , H01J37/32642 , H01J2237/2007 , H01J2237/3343
Abstract: A plasma processing method of processing a substrate with plasma in a plasma processing apparatus. The plasma processing apparatus includes: a chamber configured to accommodate a substrate; an upper electrode structure forming an upper portion of the chamber and including a temperature-controlled plate, an electrode plate disposed below the temperature-controlled plate, and an electrostatic attractor, the electrostatic attractor including a contact surface, an attraction surface, a first electrode, and a second electrode; a power supply configured to apply a voltage to the first and second electrodes; and a temperature obtaining portion configured to acquire a temperature distribution of the electrode plate. The plasma processing method includes: acquiring, by the temperature obtaining portion, the temperature distribution; applying a first voltage to the first electrode and applying a second voltage to the second electrode according to the acquired temperature distribution; and processing the substrate with plasma.
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公开(公告)号：US11032899B2
公开(公告)日：2021-06-08
申请号：US16565651
申请日：2019-09-10
Applicant: Tokyo Electron Limited
Inventor： Yohei Uchida , Tetsuji Sato , Shojiro Yahata , Taira Takase
Abstract: A plasma processing apparatus includes a cooling plate having a fixing surface to which an upper electrode is fixed, the cooling plate having, on the fixing surface, an electrostatic chuck configured to attract the upper electrode by an attraction force generated by an applied voltage; a power supply configured to apply the voltage to the electrostatic chuck; and a power supply controller configured to control the power supply such that an absolute value of the voltage applied to the electrostatic chuck is increased based on a degree of consumption of the upper electrode.
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