- 专利标题： Device and method for high pressure anneal
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申请号： US16417007申请日： 2019-05-20
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公开(公告)号： US11037781B2公开(公告)日： 2021-06-15
- 发明人: Szu-Ying Chen , Ya-Wen Chiu , Cheng-Po Chau , Yi Che Chan , Chih Ping Liao , YungHao Wang , Sen-Hong Syue
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L29/66 ; H01L21/68 ; H01L21/62 ; H01L21/8234 ; H01L21/768 ; H01L21/762
摘要：
Embodiment methods for performing a high pressure anneal process during the formation of a semiconductor device, and embodiment devices therefor, are provided. The high pressure anneal process may be a dry high pressure anneal process in which a pressurized environment of the anneal includes one or more process gases. The high pressure anneal process may be a wet anneal process in which a pressurized environment of the anneal includes steam.
公开/授权文献
- US20200006063A1 Device and Method for High Pressure Anneal 公开/授权日：2020-01-02
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