Invention Grant
- Patent Title: Current detection circuit, semiconductor device and semiconductor system
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Application No.: US16251944Application Date: 2019-01-18
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Publication No.: US11041888B2Publication Date: 2021-06-22
- Inventor: Keisuke Kimura
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JPJP2018-031904 20180226
- Main IPC: G01R31/42
- IPC: G01R31/42 ; G01R19/165 ; H03M1/46 ; G05F3/16 ; G01R19/257 ; H02M1/00 ; H03M1/14

Abstract:
A current detection circuit, a semiconductor device and a semiconductor system which are capable of improving current detection accuracy are provided. According to one embodiment of the invention, a current detection circuit includes a resistive element to convert an input current supplied from outside into an input voltage, a constant-current source, a resistive element to convert an output current of the constant-current source into a reference voltage, and an AD converter to AD-convert the input voltage using the reference voltage.
Public/Granted literature
- US20190265280A1 CURRENT DETECTION CIRCUIT, SEMICONDUCTOR DEVICE AND SEMICONDUCTOR SYSTEM Public/Granted day:2019-08-29
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