- 专利标题: Current detection circuit, semiconductor device and semiconductor system
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申请号: US16251944申请日: 2019-01-18
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公开(公告)号: US11041888B2公开(公告)日: 2021-06-22
- 发明人: Keisuke Kimura
- 申请人: RENESAS ELECTRONICS CORPORATION
- 申请人地址: JP Tokyo
- 专利权人: RENESAS ELECTRONICS CORPORATION
- 当前专利权人: RENESAS ELECTRONICS CORPORATION
- 当前专利权人地址: JP Tokyo
- 代理机构: McDermott Will & Emery LLP
- 优先权: JPJP2018-031904 20180226
- 主分类号: G01R31/42
- IPC分类号: G01R31/42 ; G01R19/165 ; H03M1/46 ; G05F3/16 ; G01R19/257 ; H02M1/00 ; H03M1/14
摘要:
A current detection circuit, a semiconductor device and a semiconductor system which are capable of improving current detection accuracy are provided. According to one embodiment of the invention, a current detection circuit includes a resistive element to convert an input current supplied from outside into an input voltage, a constant-current source, a resistive element to convert an output current of the constant-current source into a reference voltage, and an AD converter to AD-convert the input voltage using the reference voltage.
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