发明授权
- 专利标题: Method of certifying safety levels of semiconductor memories in integrated circuits
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申请号: US16897056申请日: 2020-06-09
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公开(公告)号: US11042688B1公开(公告)日: 2021-06-22
- 发明人: Ching-Wei Wu , Ming-En Bu , He-Zhou Wan , Hidehiro Fujiwara , Xiu-Li Yang
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. , TSMC CHINA COMPANY, LIMITED
- 申请人地址: TW Hsinchu; CN Shanghai
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.,TSMC CHINA COMPANY, LIMITED
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.,TSMC CHINA COMPANY, LIMITED
- 当前专利权人地址: TW Hsinchu; CN Shanghai
- 代理机构: Hauptman Ham, LLP
- 优先权: CN202010459779.9 20200527
- 主分类号: G06F30/00
- IPC分类号: G06F30/00 ; G06F30/398 ; H01L27/11 ; G11C11/413 ; G06F119/02
摘要:
A method includes specifying a target memory macro with one or more parameters, finding function-blocks in the target memory macro, and determining failure rates of the function-blocks based on an amount of transistors and area distributions in a collection of base cells. The method includes generating a failure-mode analysis for the target memory macro, from a memory compiler, based on the failure rates of the function-blocks. The method includes determining a safety level of the target memory macro, based upon the failure-mode analysis of the target memory macro.
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