- 专利标题: Static random access memory method
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申请号: US16884774申请日: 2020-05-27
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公开(公告)号: US11043264B2公开(公告)日: 2021-06-22
- 发明人: Wei-Cheng Wu , Wei Min Chan , Yen-Huei Chen , Hung-Jen Liao , Ping-Wei Wang
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Hauptman Ham, LLP
- 主分类号: G11C11/41
- IPC分类号: G11C11/41 ; G11C11/419 ; G11C11/4063 ; G11C11/409 ; G11C11/412
摘要:
A method of performing a write operation on a static random access memory (SRAM) bit cell includes activating the bit cell by supplying a signal to a p-type pass gate of the bit cell, the signal causing the p-type pass gate to be in a conductive state, using a p-type transistor of a write multiplexer to maintain a data line at a logically high voltage, and transferring bit information from the data line to the activated bit cell using the p-type pass gate.
公开/授权文献
- US20200286550A1 STATIC RANDOM ACCESS MEMORY METHOD 公开/授权日:2020-09-10
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