- Patent Title: Enhanced spatial ALD of metals through controlled precursor mixing
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Application No.: US15959972Application Date: 2018-04-23
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Publication No.: US11043386B2Publication Date: 2021-06-22
- Inventor: Kelvin Chan , Yihong Chen , Jared Ahmad Lee , Kevin Griffin , Srinivas Gandikota , Joseph Yudovsky , Mandyam Sriram
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/285
- IPC: H01L21/285 ; H01L21/3205 ; C23C16/06 ; C23C16/455 ; H01L21/28 ; C23C16/14 ; C23C16/452 ; C23C16/458 ; H01L21/768
Abstract:
Methods of depositing a film by atomic layer deposition are described. The methods comprise exposing a substrate surface to a first process condition comprising a first reactive gas and a second reactive gas and exposing the substrate surface to a second process condition comprising the second reactive gas. The first process condition comprises less than a full amount of the second reactive gas for a CVD process.
Public/Granted literature
- US20180240676A1 Enhanced Spatial ALD Of Metals Through Controlled Precursor Mixing Public/Granted day:2018-08-23
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