- 专利标题: Method of manufacturing a magnetoresistive device
-
申请号: US16695396申请日: 2019-11-26
-
公开(公告)号: US11043630B2公开(公告)日: 2021-06-22
- 发明人: Sanjeev Aggarwal , Sarin A. Deshpande
- 申请人: Everspin Technologies, Inc.
- 申请人地址: US AZ Chandler
- 专利权人: Everspin Technologies, Inc.
- 当前专利权人: Everspin Technologies, Inc.
- 当前专利权人地址: US AZ Chandler
- 代理机构: Bookoff McAndrews, PLLC
- 主分类号: H01L43/04
- IPC分类号: H01L43/04 ; H01L21/3065 ; H01L43/14
摘要:
A magnetoresistive device may include an intermediate region positioned between a magnetically fixed region and a magnetically free region, and spin Hall channel region extending around a sidewall of at least the magnetically free region. An insulator region may extend around a portion of the sidewall such that the insulator region contacts a first portion of the sidewall and the spin Hall channel region contacts a second portion of the sidewall.
公开/授权文献
- US20200176672A1 METHOD OF MANUFACTURING A MAGNETORESISTIVE DEVICE 公开/授权日:2020-06-04
信息查询
IPC分类: