- 专利标题: Metallization for a thin-film component, process for the production thereof and sputtering target
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申请号: US15504997申请日: 2015-08-10
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公开(公告)号: US11047038B2公开(公告)日: 2021-06-29
- 发明人: Harald Koestenbauer , Judith Koestenbauer , Gerhard Leichtfried , Joerg Winkler , Moo Sung Hwang , Martin Kathrein , Elisabeth Eidenberger
- 申请人: PLANSEE SE
- 申请人地址: AT Reutte
- 专利权人: PLANSEE SE
- 当前专利权人: PLANSEE SE
- 当前专利权人地址: AT Reutte
- 代理商 Laurence A. Greenberg; Werner H. Stemer; Ralph E. Locher
- 优先权: AT302/2014 20140820
- 国际申请: PCT/AT2015/000106 WO 20150810
- 国际公布: WO2016/025968 WO 20160225
- 主分类号: B32B15/00
- IPC分类号: B32B15/00 ; C23C14/34 ; C22C27/04 ; C23C24/04 ; C22C1/04 ; H01B1/02 ; H01L23/532
摘要:
A metallization for a thin-film component includes at least one layer composed of an Mo-based alloy containing Al and Ti and usual impurities. A process for producing a metallization includes providing at least one sputtering target, depositing at least one layer of an Mo-based alloy containing Al and Ti and usual impurities, and structuring the metallization by using at least one photolithographic process and at least one subsequent etching step. A sputtering target is composed of an Mo-based alloy containing Al and Ti and usual impurities. A process for producing a sputtering target composed of an Mo-based alloy includes providing a powder mixture containing Mo and also Al and Ti and cold gas spraying (CGS) of the powder mixture onto a suitable support material.
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