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公开(公告)号：US11862444B2
公开(公告)日：2024-01-02
申请号：US16753898
申请日：2018-09-05
申请人： PLANSEE SE
IPC分类号： H01J37/34 , C23C14/34 , C23C14/08 , C04B35/495 , C04B35/645
CPC分类号： H01J37/3429 , C04B35/495 , C04B35/645 , C04B35/6455 , C23C14/083 , C23C14/3414 , C23C14/3485 , H01J37/3426 , C04B2235/3251 , C04B2235/3256 , C04B2235/5436 , C04B2235/604 , C04B2235/666
摘要： An electrically conductive, oxidic target material includes a proportion of substoichiometric molybdenum oxide phases of at least 60% by volume, an MoO2 phase in a proportion of 2-20% by volume, and optionally an MoO3 phase in a proportion of 0-20% by volume. The substoichiometric molybdenum oxide phase proportion is formed by one or more substoichiometric MoO3-y phase(s), where y is in each case in a range from 0.05 to 0.25. A process for producing the target material and a process for using the target material are also provided.
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2.发明授权公开(公告)号：US11047038B2
公开(公告)日：2021-06-29
申请号：US15504997
申请日：2015-08-10
申请人： PLANSEE SE
发明人： Harald Koestenbauer , Judith Koestenbauer , Gerhard Leichtfried , Joerg Winkler , Moo Sung Hwang , Martin Kathrein , Elisabeth Eidenberger
摘要： A metallization for a thin-film component includes at least one layer composed of an Mo-based alloy containing Al and Ti and usual impurities. A process for producing a metallization includes providing at least one sputtering target, depositing at least one layer of an Mo-based alloy containing Al and Ti and usual impurities, and structuring the metallization by using at least one photolithographic process and at least one subsequent etching step. A sputtering target is composed of an Mo-based alloy containing Al and Ti and usual impurities. A process for producing a sputtering target composed of an Mo-based alloy includes providing a powder mixture containing Mo and also Al and Ti and cold gas spraying (CGS) of the powder mixture onto a suitable support material.
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