- 专利标题: Method for manufacturing reflective mask blank, reflective mask blank, method for manufacturing reflective mask, reflective mask, and method for manufacturing semiconductor device
-
申请号: US16084332申请日: 2017-03-21
-
公开(公告)号: US11048159B2公开(公告)日: 2021-06-29
- 发明人: Tsutomu Shoki , Takahiro Onoue
- 申请人: HOYA CORPORATION
- 申请人地址: JP Tokyo
- 专利权人: HOYA CORPORATION
- 当前专利权人: HOYA CORPORATION
- 当前专利权人地址: JP Tokyo
- 代理机构: Kilpatrick Townsend & Stockton LLP
- 优先权: JPJP2016-072287 20160331,JPJP2016-190721 20160929
- 国际申请: PCT/JP2017/011180 WO 20170321
- 国际公布: WO2017/169973 WO 20171005
- 主分类号: G03F1/24
- IPC分类号: G03F1/24 ; G03F1/42 ; G03F1/84 ; G03F1/26 ; G03F1/44 ; G03F7/20
摘要:
A method of manufacturing a reflective mask blank includes: forming a multilayer reflective film, which is configured to reflect EUV light, on a substrate to form a substrate with a multilayer reflective film; subjecting the substrate with a multilayer reflective film to defect inspection; forming an absorber film, which is configured to absorb the EUV light, on the multilayer reflective film of the substrate with a multilayer reflective film; forming a reflective mask blank, in which an alignment region is formed in an outer peripheral edge region of a pattern formation region by removing the absorber film so that the multilayer reflective film of an area including an element serving as a reference of defect information on the multilayer reflective film is exposed in the alignment region; and performing defect management of the reflective mask blank through use of the alignment region.
公开/授权文献
信息查询