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公开(公告)号：US11880130B2
公开(公告)日：2024-01-23
申请号：US17946709
申请日：2022-09-16
Applicant: HOYA CORPORATION
Inventor： Yohei Ikebe , Tsutomu Shoki , Takahiro Onoue , Hirofumi Kozakai
Abstract: Provided are a reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask. The reflective mask blank is characterized in that the phase shift film is composed of a material comprised of an alloy having two or more types of metal so that reflectance of the surface of the phase shift film is more than 3% to not more than 20% and so as to have a phase difference of 170 degrees to 190 degrees, and when a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k>α*n+β is defined as Group A and a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k
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公开(公告)号：US11454878B2
公开(公告)日：2022-09-27
申请号：US16625569
申请日：2018-06-14
Applicant: HOYA CORPORATION
Inventor： Hirofumi Kozakai , Takahiro Onoue
IPC: H01L21/44 , G03F1/24 , G03F1/58 , H01L21/033
Abstract: Provided is a substrate with multilayer reflective film used to manufacture a reflective mask having a multilayer reflective film having high reflectance with respect to exposure light and little film stress. The substrate with multilayer reflective film is provided with a multilayer reflective film for reflecting exposure light, the substrate with multilayer reflective film comprising a multilayer film obtained by building up an alternating stack of low refractive index layers and high refractive index layers on a substrate, and the multilayer reflective film contains krypton (Kr).
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公开(公告)号：US11003068B2
公开(公告)日：2021-05-11
申请号：US16490018
申请日：2018-02-20
Applicant: HOYA CORPORATION
Inventor： Yohei Ikebe , Tsutomu Shoki , Takahiro Onoue , Hirofumi Kozakai
Abstract: Provided are a reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask. The reflective mask blank is characterized in that the phase shift film is composed of a material comprised of an alloy having two or more types of metal so that reflectance of the surface of the phase shift film is more than 3% to not more than 20% and so as to have a phase difference of 170 degrees to 190 degrees, and when a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k>α*n+β is defined as Group A and a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k
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公开(公告)号：US11852964B2
公开(公告)日：2023-12-26
申请号：US17325627
申请日：2021-05-20
Applicant: HOYA CORPORATION
Inventor： Tsutomu Shoki , Takahiro Onoue
Abstract: A method of manufacturing a reflective mask blank includes: forming a multilayer reflective film, which is configured to reflect EUV light, on a substrate to form a substrate with a multilayer reflective film; subjecting the substrate with a multilayer reflective film to defect inspection; forming an absorber film, which is configured to absorb the EUV light, on the multilayer reflective film of the substrate with a multilayer reflective film; forming a reflective mask blank, in which an alignment region is formed in an outer peripheral edge region of a pattern formation region by removing the absorber film so that the multilayer reflective film of an area including an element serving as a reference of defect information on the multilayer reflective film is exposed in the alignment region; and performing defect management of the reflective mask blank through use of the alignment region.
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公开(公告)号：US09720317B2
公开(公告)日：2017-08-01
申请号：US14908955
申请日：2014-09-09
Applicant: HOYA CORPORATION
Inventor： Takahiro Onoue
CPC classification number: G03F1/24 , G03F1/48 , G03F7/2004
Abstract: A substrate with a multilayer reflective film that yields a reflective mask achieving high reflectance and exhibiting excellent cleaning resistance. The present invention is directed to a substrate with a multilayer reflective film, which has: a substrate; a multilayer reflective film, formed on a substrate, having a layer comprising Si as a high refractive-index material and a layer comprising a low refractive-index material, wherein the layers are periodically laminate; and a Ru protective film, formed on the multilayer reflective film, for protecting the multilayer reflective film, wherein the surface layer of the multilayer reflective film on the other side of the substrate is the layer comprising Si, and wherein the Ru protective film comprises a Ru compound comprising Ru and Ti, wherein the Ru compound contains Ru in an amount greater than that in the stoichiometric composition of RuTi.
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Patent Agency Ranking
6.发明授权Substrate with multilayer reflective film, reflective mask blank for EUV lithography, method of manufacturing reflective mask for EUV lithography and method of manufacturing semiconductor device 有权具有多层反射膜的基板，用于EUV光刻的反射掩模板，用于EUV光刻的反射掩模的制造方法和半导体器件的制造方法公开(公告)号：US09383637B2
公开(公告)日：2016-07-05
申请号：US14373715
申请日：2013-03-21
Applicant: HOYA CORPORATION
Inventor： Takahiro Onoue , Toshihiko Orihara
IPC: G03F1/48 , G03F1/24 , B82Y10/00 , B82Y40/00 , H01L21/033
CPC classification number: G03F1/24 , B82Y10/00 , B82Y40/00 , G03F1/48 , H01L21/0332 , H01L21/0337 , Y10T428/31678
Abstract: An object of the present invention is to provide a substrate with a multilayer reflective film and the like used in the manufacturing of a reflective mask blank for EUV lithography which is to be subjected to dry etching with a Cl-based gas, wherein in the substrate with the multilayer reflective film, the loss of protective films by the dry etching and subsequent wet cleaning is very limited. The present invention is a substrate with a multilayer reflective film used in the manufacturing of a reflective mask blank for EUV lithography, comprising a substrate, a multilayer reflective film disposed on the substrate to reflect EUV light, and a protective film disposed on the multilayer reflective film to protect the multilayer reflective film, the protective film includes an alloy containing at least two metals, the alloy being an all-proportional solid solution.
Abstract translation: 本发明的目的是提供一种用于制造用于EUV光刻的反射掩模坯料的多层反射膜等的衬底，其将用Cl基气体进行干蚀刻，其中在衬底 通过多层反射膜，通过干蚀刻和随后的湿法清洁的保护膜的损失非常有限。 本发明是一种具有用于制造用于EUV光刻的反射掩模板的多层反射膜的基板，包括基板，设置在基板上以反射EUV光的多层反射膜以及设置在多层反射层上的保护膜 膜保护多层反射膜，保护膜包括含有至少两种金属的合金，该合金是全比例的固溶体。
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公开(公告)号：US12135496B2
公开(公告)日：2024-11-05
申请号：US18526463
申请日：2023-12-01
Applicant: HOYA CORPORATION
Inventor： Yohei Ikebe , Tsutomu Shoki , Takahiro Onoue , Hirofumi Kozakai
Abstract: A reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask.
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公开(公告)号：US11480867B2
公开(公告)日：2022-10-25
申请号：US17227655
申请日：2021-04-12
Applicant: HOYA CORPORATION
Inventor： Yohei Ikebe , Tsutomu Shoki , Takahiro Onoue , Hirofumi Kozakai
Abstract: Provided are a reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask. The reflective mask blank is characterized in that the phase shift film is composed of a material comprised of an alloy having two or more types of metal so that reflectance of the surface of the phase shift film is more than 3% to not more than 20% and so as to have a phase difference of 170 degrees to 190 degrees, and when a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k>α*n+β is defined as Group A and a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k
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公开(公告)号：US11237472B2
公开(公告)日：2022-02-01
申请号：US16490010
申请日：2018-03-01
Applicant: HOYA CORPORATION
Inventor： Yohei Ikebe , Junichi Horikawa , Takahiro Onoue , Mizuki Kataoka
Abstract: Provided are a reflective mask blank and a reflective mask, which are able to reduce the shadowing effects of EUV lithography and form a fine pattern. As a result, a semiconductor device can be stably manufactured with high transfer accuracy. The reflective mask blank comprises a multilayer reflective film and an absorber film in that order on a substrate, and the absorber film comprises a material comprising an amorphous metal comprising at least one or more elements among cobalt (Co) and nickel (Ni).
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公开(公告)号：US11048159B2
公开(公告)日：2021-06-29
申请号：US16084332
申请日：2017-03-21
Applicant: HOYA CORPORATION
Inventor： Tsutomu Shoki , Takahiro Onoue
Abstract: A method of manufacturing a reflective mask blank includes: forming a multilayer reflective film, which is configured to reflect EUV light, on a substrate to form a substrate with a multilayer reflective film; subjecting the substrate with a multilayer reflective film to defect inspection; forming an absorber film, which is configured to absorb the EUV light, on the multilayer reflective film of the substrate with a multilayer reflective film; forming a reflective mask blank, in which an alignment region is formed in an outer peripheral edge region of a pattern formation region by removing the absorber film so that the multilayer reflective film of an area including an element serving as a reference of defect information on the multilayer reflective film is exposed in the alignment region; and performing defect management of the reflective mask blank through use of the alignment region.
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