- 专利标题: Heat spreading layer integrated within a composite IC die structure and methods of forming the same
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申请号: US16727703申请日: 2019-12-26
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公开(公告)号: US11049791B1公开(公告)日: 2021-06-29
- 发明人: Shawna Liff , Adel Elsherbini , Johanna Swan , Jimin Yao , Veronica Strong
- 申请人: Intel Corporation
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Green, Howard & Mughal LLP.
- 主分类号: H01L23/373
- IPC分类号: H01L23/373 ; H01L21/768 ; H01L25/065 ; H01L23/48
摘要:
A heat spreading material is integrated into a composite die structure including a first IC die having a first dielectric material and a first electrical interconnect structure, and a second IC die having a second dielectric material and a second electrical interconnect structure. The composite die structure may include a composite electrical interconnect structure comprising the first interconnect structure in direct contact with the second interconnect structure at a bond interface. The heat spreading material may be within at least a portion of a dielectric area through which the bond interface extends. The heat spreading material may be located within one or more dielectric materials surrounding the composite interconnect structure, and direct a flow of heat generated by one or more of the first and second IC dies.
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