- 专利标题: Embedded bridge with through-silicon Vias
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申请号: US16457336申请日: 2019-06-28
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公开(公告)号: US11049798B2公开(公告)日: 2021-06-29
- 发明人: Aditya S. Vaidya , Ravindranath V. Mahajan , Digvijay A. Raorane , Paul R. Start
- 申请人: Intel Corporation
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Schwabe, Williamson & Wyatt, P.C.
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L23/49 ; H01L21/76 ; H01L21/768 ; H01L23/498 ; H01L23/00 ; H01L25/16 ; H01L23/538 ; H01L25/065
摘要:
An integrated circuit (IC) package comprising a-substrate having a first side and an opposing a second side, and a bridge die within the substrate. The bridge die comprises a plurality of vias extending from a first side to a second side of the-bridge die. The-bridge die comprises a first plurality of pads on the first side of the bridge die and a second plurality of pads on the second side. The plurality of vias interconnect snes of the first plurality of pads to ones of the second plurality of pads. The bridge die comprises an adhesive film over a layer of silicon oxide on the second side of the bridge die.
公开/授权文献
- US20190326198A1 EMBEDDED BRIDGE WITH THROUGH-SILICON VIAS 公开/授权日:2019-10-24
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