发明授权
- 专利标题： Three-dimensional memory device containing through-memory-level contact via structures
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申请号： US16881353申请日： 2020-05-22
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公开(公告)号： US11049876B2公开(公告)日： 2021-06-29
- 发明人: Michimoto Kaminaga , Zhixin Cui
- 申请人： SANDISK TECHNOLOGIES LLC
- 申请人地址： US TX Addison
- 专利权人： SANDISK TECHNOLOGIES LLC
- 当前专利权人： SANDISK TECHNOLOGIES LLC
- 当前专利权人地址： US TX Addison
- 代理机构： The Marbury Law Group PLLC
- 主分类号： H01L27/11582
- IPC分类号： H01L27/11582 ; H01L27/1157 ; H01L27/11573 ; H01L27/11565 ; H01L21/768 ; H01L27/11556 ; H01L23/532 ; H01L23/522 ; H01L27/11575 ; H01L27/11519 ; H01L27/11524 ; H01L27/11526
摘要：
A contact via structure vertically extending through an alternating stack of insulating layers and electrically conductive layers is provided in a staircase region having stepped surfaces. The contact via structure is electrically isolated from each electrically conductive layer of the alternating stack except for an electrically conductive layer that directly underlies a horizontal interface of the stepped surfaces. A laterally-insulated structure includes a conductive via structure having an upper conductive via portion overlying and contacting an annular area of a top surface of one of the electrically conductive layers, a lower conductive via portion having a lesser lateral dimension than the upper conductive via portion and extending through at least a bottommost one of the electrically conductive layers, and an interconnection conductive via portion located between the upper conductive via portion and the lower conductive via portion and contacting a cylindrical sidewall of the one of the electrically conductive layers.
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