Invention Grant
- Patent Title: Display device having a plurality of thin-film transistors with different semiconductors
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Application No.: US16529424Application Date: 2019-08-01
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Publication No.: US11056509B2Publication Date: 2021-07-06
- Inventor: Soyeon Je , KiTae Kim
- Applicant: LG Display Co., Ltd.
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.
- Current Assignee: LG Display Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Fenwick & West LLP
- Priority: KR10-2018-0145562 20181122
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L29/786 ; H01L31/0232 ; H01L51/40 ; H01L21/84 ; H01L27/12 ; H01L27/32 ; H01L29/417 ; H01L29/423

Abstract:
A display device includes a substrate; a buffer layer disposed on the substrate; a first thin-film transistor comprising a first active layer made of a low-temperature poly-silicon (LTPS), a first gate electrode overlapping with the first active layer with the first gate insulating layer and the second gate insulating layer therebetween, and a first source electrode and a first drain electrode electrically connected to the first active layer; and a second thin-film transistor comprising a second active layer made of an oxide semiconductor, a second gate electrode overlapping with the second active layer with the second gate insulating layer therebetween, and a second source electrode and a second drain electrode electrically connected to the second active layer. The first gate electrode of the first thin-film transistor and the second gate electrode of the second thin-film transistor may be disposed on the second gate insulating layer.
Public/Granted literature
- US20200168638A1 Display Device Public/Granted day:2020-05-28
Information query
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