Invention Grant
- Patent Title: Method of forming a doped metal carbide film on a substrate and related semiconductor device structures
-
Application No.: US16400814Application Date: 2019-05-01
-
Publication No.: US11056567B2Publication Date: 2021-07-06
- Inventor: Dong Li , Peng-Fu Hsu , Petri Raisanen , Moataz Bellah Mousa , Ward Johnson , Xichong Chen
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Agency: Snell & Wilmer L.L.P.
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L21/28 ; H01L29/49
Abstract:
Methods for depositing a doped metal carbide film on a substrate are disclosed. The methods may include: depositing a doped metal carbide film on a substrate utilizing at least one deposition cycle of a cyclical deposition process; and contacting the doped metal carbide film with a plasma generated from a hydrogen-containing gas. Semiconductor device structures including a doped metal carbide film formed by the methods of the disclosure are also disclosed.
Information query
IPC分类:
