公开(公告)号：US11501973B2

公开(公告)日：2022-11-15

申请号：US17097275

申请日：2020-11-13

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Mark Olstad ,  Jose Alexandro Romero ,  Dong Li ,  Ward Johnson ,  Peijun Chen

IPC: H01L21/285 ,  H01L29/49 ,  C23C16/455 ,  C23C16/32 ,  H01L21/28 ,  H01L29/78

Abstract: A method of depositing a material film on a substrate within a reaction chamber by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant and purging the reaction chamber with a first main purge. The method also includes: contacting the substrate with a second vapor phase reactant by two or more micro pulsing processes, wherein each micro pulsing process comprises: contacting the substrate with a micro pulse of a second vapor phase reactant; and purging the reaction chamber with a micro purge, wherein each of the micro pulses of the second vapor phase reactant provides a substantially constant concentration of the second vapor phase reactant into the reaction chamber. The method may also include; purging the reaction chamber with a second main purge. Device structures including a material film deposited by the methods of the disclosure are also disclosed.

公开(公告)号：US11056567B2

公开(公告)日：2021-07-06

申请号：US16400814

申请日：2019-05-01

Applicant: ASM IP Holding B.V.

Inventor： Dong Li ,  Peng-Fu Hsu ,  Petri Raisanen ,  Moataz Bellah Mousa ,  Ward Johnson ,  Xichong Chen

IPC: H01L29/423 ,  H01L21/28 ,  H01L29/49

Abstract: Methods for depositing a doped metal carbide film on a substrate are disclosed. The methods may include: depositing a doped metal carbide film on a substrate utilizing at least one deposition cycle of a cyclical deposition process; and contacting the doped metal carbide film with a plasma generated from a hydrogen-containing gas. Semiconductor device structures including a doped metal carbide film formed by the methods of the disclosure are also disclosed.

公开(公告)号：US20190221433A1

公开(公告)日：2019-07-18

申请号：US16242829

申请日：2019-01-08

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Mark Olstad ,  Jose Alexandro Romero ,  Dong Li ,  Ward Johnson ,  Peijun Chen

IPC: H01L21/285 ,  H01L29/49 ,  H01L21/28 ,  C23C16/32 ,  C23C16/455

CPC classification number: H01L21/28556 ,  C23C16/32 ,  C23C16/45527 ,  C23C16/45553 ,  H01L21/28088 ,  H01L29/4966

Abstract: A method of depositing a material film on a substrate within a reaction chamber by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant and purging the reaction chamber with a first main purge. The method also includes: contacting the substrate with a second vapor phase reactant by two or more micro pulsing processes, wherein each micro pulsing process comprises: contacting the substrate with a micro pulse of a second vapor phase reactant; and purging the reaction chamber with a micro purge, wherein each of the micro pulses of the second vapor phase reactant provides a substantially constant concentration of the second vapor phase reactant into the reaction chamber. The method may also include; purging the reaction chamber with a second main purge. Device structures including a material film deposited by the methods of the disclosure are also disclosed.

公开(公告)号：US11837483B2

公开(公告)日：2023-12-05

申请号：US17670151

申请日：2022-02-11

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Ward Johnson

IPC: H01L21/673 ,  H01L21/67 ,  H01L21/302

CPC classification number: H01L21/67393 ,  H01L21/302 ,  H01L21/67201

Abstract: An apparatus and method for reducing moisture within a wafer handling chamber is disclosed. The moisture reduction results in reduced oxidation of a wafer. The moisture reduction is made possible through use of valves and purging gas. Operation of the valves may result in improved localized purging.

公开(公告)号：US20220165595A1

公开(公告)日：2022-05-26

申请号：US17670151

申请日：2022-02-11

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Ward Johnson

IPC: H01L21/673 ,  H01L21/67 ,  H01L21/302

Abstract: An apparatus and method for reducing moisture within a wafer handling chamber is disclosed. The moisture reduction results in reduced oxidation of a wafer. The moisture reduction is made possible through use of valves and purging gas. Operation of the valves may result in improved localized purging.

公开(公告)号：US20220351974A1

公开(公告)日：2022-11-03

申请号：US17859888

申请日：2022-07-07

Applicant: ASM IP Holding B.V.

Inventor： Moataz Bellah Mousa ,  Peng-Fu Hsu ,  Ward Johnson ,  Petri Raisanen

IPC: H01L21/28 ,  H01L21/02 ,  H01L21/285

Abstract: A method of forming an electrode on a substrate is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a titanium tetraiodide (TiI4) precursor; contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor; and depositing a titanium nitride layer over a surface of the substrate thereby forming the electrode; wherein the titanium nitride layer has an electrical resistivity of less than 400 μΩ-cm. Related semiconductor device structures including a titanium nitride electrode deposited by the methods of the disclosure are also provided.

公开(公告)号：US20210328036A1

公开(公告)日：2021-10-21

申请号：US17360045

申请日：2021-06-28

Applicant: ASM IP Holding B.V.

Inventor： Dong Li ,  Peng-Fu Hsu ,  Petri Raisanen ,  Moataz Bellah Mousa ,  Ward Johnson ,  Xichong Chen

IPC: H01L29/423 ,  H01L21/28 ,  H01L29/49

Abstract: Methods for depositing a doped metal carbide film on a substrate are disclosed. The methods may include: depositing a doped metal carbide film on a substrate utilizing at least one deposition cycle of a cyclical deposition process; and contacting the doped metal carbide film with a plasma generated from a hydrogen containing gas. Semiconductor device structures including a doped metal carbide film formed by the methods of the disclosure are also disclosed.

公开(公告)号：US20210028021A1

公开(公告)日：2021-01-28

申请号：US17038514

申请日：2020-09-30

Applicant: ASM IP Holding B.V.

Inventor： MOATAZ BELLAH MOUSA ,  Peng-Fu Hsu ,  Ward Johnson ,  Petri Raisanen

IPC: H01L21/28 ,  H01L21/02 ,  H01L21/285

Abstract: A method of forming an electrode on a substrate is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a titanium tetraiodide (TiI4) precursor; contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor; and depositing a titanium nitride layer over a surface of the substrate thereby forming the electrode; wherein the titanium nitride layer has an electrical resistivity of less than 400 μΩ-cm. Related semiconductor device structures including a titanium nitride electrode deposited by the methods of the disclosure are also provided.

公开(公告)号：US12020938B2

公开(公告)日：2024-06-25

申请号：US17859888

申请日：2022-07-07

Applicant: ASM IP Holding B.V.

Inventor： Moataz Bellah Mousa ,  Peng-Fu Hsu ,  Ward Johnson ,  Petri Raisanen

IPC: H01L29/49 ,  H01L21/02 ,  H01L21/28 ,  H01L21/285 ,  H01L49/02 ,  H10B12/00

CPC classification number: H01L21/28088 ,  H01L21/02186 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/285 ,  H01L28/60 ,  H01L29/4966 ,  H10B12/03

Abstract: A method of forming an electrode on a substrate is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a titanium tetraiodide (TiI4) precursor; contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor; and depositing a titanium nitride layer over a surface of the substrate thereby forming the electrode; wherein the titanium nitride layer has an electrical resistivity of less than 400 μΩ-cm. Related semiconductor device structures including a titanium nitride electrode deposited by the methods of the disclosure are also provided.

公开(公告)号：US11270899B2

公开(公告)日：2022-03-08

申请号：US16423824

申请日：2019-05-28

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Ward Johnson

IPC: H01L21/673 ,  H01L21/67 ,  H01L21/302

Abstract: An apparatus and method for reducing moisture within a wafer handling chamber is disclosed. The moisture reduction results in reduced oxidation of a wafer. The moisture reduction is made possible through use of valves and purging gas. Operation of the valves may result in improved localized purging.