Invention Grant
- Patent Title: Complementary transistor structures formed with the assistance of doped-glass layers
-
Application No.: US16784683Application Date: 2020-02-07
-
Publication No.: US11063140B2Publication Date: 2021-07-13
- Inventor: John J. Pekarik , Anthony K. Stamper , Vibhor Jain , Steven M. Shank , John J. Ellis-Monaghan , Herbert Ho , Qizhi Liu
- Applicant: GLOBALFOUNDRIES U.S. Inc.
- Applicant Address: US CA Santa Clara
- Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Thompson Hine LLP
- Agent Anthony Canale
- Main IPC: H01L29/737
- IPC: H01L29/737 ; H01L29/66 ; H01L29/08 ; H01L29/423 ; H01L27/082
Abstract:
Structures for a heterojunction bipolar transistor and methods of forming a structure for a heterojunction bipolar transistor. A first heterojunction bipolar transistor includes a first emitter, a first collector, and a first base layer having a portion positioned between the first emitter and the first collector. A second heterojunction bipolar transistor includes a second emitter, a second collector, and a second base layer having a portion positioned between the second emitter and the second collector. The first and second base layers each comprise silicon-germanium, the first base layer includes a first germanium profile, and the second base layer includes a second germanium profile that is identical to the first germanium profile.
Public/Granted literature
- US20210098612A1 COMPLEMENTARY TRANSISTOR STRUCTURES FORMED WITH THE ASSISTANCE OF DOPED-GLASS LAYERS Public/Granted day:2021-04-01
Information query
IPC分类:
