- 专利标题： Regulator circuit and manufacture thereof
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申请号： US16044949申请日： 2018-07-25
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公开(公告)号： US11068009B2公开(公告)日： 2021-07-20
- 发明人: Jun Wang
- 申请人： SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION , SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
- 申请人地址： CN Shanghai; CN Beijing
- 专利权人： SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
- 当前专利权人： SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
- 当前专利权人地址： CN Shanghai; CN Beijing
- 代理机构： Innovation Counsel LLP
- 优先权： CN201710615534.9 20170726
- 主分类号： G05F3/26
- IPC分类号： G05F3/26 ; G05F3/24 ; H03F1/02
摘要：
A regulator circuit and its manufacturing method are presented, relating to semiconductor technology. The regulator circuit comprises a mirror current source comprising two current output nodes; a depletion MOS transistor comprising a drain connected to one current output node of the mirror current source, a gate connected to the ground, and a source; an enhancement MOS transistor comprising a drain connected to the other current output node of the mirror current source, and a source connected to the ground; a first resistance device comprising a first node connected to the drain of the depletion MOS transistor, and a second node connected to a gate of the enhancement MOS transistor; and a second resistance device comprising a first node connected to the first resistance device, and a second node connected to the ground. This regulator circuit consumes less power than its conventional counterparts.
公开/授权文献
- US20190033906A1 REGULATOR CIRCUIT AND MANUFACTURE THEREOF 公开/授权日：2019-01-31
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