Invention Grant
- Patent Title: Integrated circuit comprising a substrate equipped with a trap-rich region, and fabricating process
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Application No.: US16278313Application Date: 2019-02-18
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Publication No.: US11075177B2Publication Date: 2021-07-27
- Inventor: Didier Dutartre
- Applicant: STMicroelectronics (Crolles 2) SAS
- Applicant Address: FR Crolles
- Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee Address: FR Crolles
- Agency: Crowe & Dunlevy
- Priority: FR1851615 20180223
- Main IPC: H01L23/60
- IPC: H01L23/60 ; H01L23/66 ; H01L21/762 ; H01L29/06
Abstract:
An integrated circuit includes a substrate having at least one first domain and at least one second domain that is different from the at least one first domain. A trap-rich region is provided in the substrate at the locations of the at least one second domain only. Locations of the at least one first domain do not include the trap-rich region.
Public/Granted literature
- US20190267335A1 INTEGRATED CIRCUIT COMPRISING A SUBSTRATE EQUIPPED WITH A TRAP-RICH REGION, AND FABRICATING PROCESS Public/Granted day:2019-08-29
Information query
IPC分类:
