Invention Grant
- Patent Title: Structure for use in a metal-insulator-metal capacitor
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Application No.: US16677309Application Date: 2019-11-07
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Publication No.: US11075261B2Publication Date: 2021-07-27
- Inventor: Mihaela Ioana Popovici , Ludovic Goux , Gouri Sankar Kar
- Applicant: IMEC vzw
- Applicant Address: BE Leuven
- Assignee: IMEC vzw
- Current Assignee: IMEC vzw
- Current Assignee Address: BE Leuven
- Agency: Knobbe, Martens, Olson & Bear LLP
- Priority: EP18209406 20181130
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L27/108 ; H01L21/02 ; H01L21/285

Abstract:
The disclosed technology relates to a structure for use in a metal-insulator-metal capacitor. In one aspect, the structure comprises a bottom electrode formed of a Ru layer. The Ru layer has a top surface characterized by a grazing incidence X-ray diffraction spectrum comprising a first intensity and a second intensity, the first intensity corresponding to a diffracting plane of Miller indices (0 0 2) being larger than the second intensity corresponding to a diffracting plane of Miller indices (1 0 1). The structure further comprises an interlayer on the top surface of the Ru layer, the interlayer being formed of an oxide of Sr and Ru having a cubic lattice structure, and a dielectric layer on the interlayer, the dielectric layer being formed of an oxide of Sr and Ti.
Public/Granted literature
- US20200176554A1 STRUCTURE FOR USE IN A METAL-INSULATOR-METAL CAPACITOR Public/Granted day:2020-06-04
Information query
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