Invention Grant
- Patent Title: Method for manufacturing semiconductor substrate
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Application No.: US16805896Application Date: 2020-03-02
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Publication No.: US11081344B2Publication Date: 2021-08-03
- Inventor: Atsushi Fukugawa , Michiaki Murata
- Applicant: FUJIFILM BUSINESS INNOVATION CORP.
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM BUSINESS INNOVATION CORP.
- Current Assignee: FUJIFILM BUSINESS INNOVATION CORP.
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JPJP2018-010753 20180125
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/02 ; H01L21/463 ; H01L21/304
Abstract:
Provided is a method for manufacturing a semiconductor substrate including: preparing a semiconductor substrate having a front surface on which an epitaxial layer has been formed; and forming a fracture layer on a rear surface of the semiconductor substrate before forming elements on the epitaxial layer.
Information query
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