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公开(公告)号：US11081344B2
公开(公告)日：2021-08-03
申请号：US16805896
申请日：2020-03-02
Applicant: FUJIFILM BUSINESS INNOVATION CORP.
Inventor： Atsushi Fukugawa , Michiaki Murata
IPC: H01L21/00 , H01L21/02 , H01L21/463 , H01L21/304
Abstract: Provided is a method for manufacturing a semiconductor substrate including: preparing a semiconductor substrate having a front surface on which an epitaxial layer has been formed; and forming a fracture layer on a rear surface of the semiconductor substrate before forming elements on the epitaxial layer.
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