发明授权
- 专利标题： 3D IC power grid
-
申请号： US16516966申请日： 2019-07-19
-
公开(公告)号： US11081426B2公开(公告)日： 2021-08-03
- 发明人: Noor E. V. Mohamed , Fong-Yuan Chang , Po-Hsiang Huang , Chin-Chou Liu
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Merchant & Gould P.C.
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L25/065 ; H01L23/00 ; H01L21/822
摘要：
A three dimensional Integrated Circuit (IC) Power Grid (PG) may be provided. The three dimensional IC PG may comprise a first IC die, a second IC die, an interface, and a power distribution structure. The interface may be disposed between the first IC die and the second IC die. The power distribution structure may be connected to the interface. The power distribution structure may comprise at least one Through-Silicon Vias (TSV) and a ladder structure connected to at least one TSV.
公开/授权文献
- US20200043832A1 3D IC POWER GRID 公开/授权日：2020-02-06
信息查询
IPC分类:
