Hardmask composition and method of forming pattern using the hardmask composition

Invention Grant

US11086223B2 Hardmask composition and method of forming pattern using the hardmask composition 有权

Patent Title: Hardmask composition and method of forming pattern using the hardmask composition
Application No.: US16426046

Application Date: 2019-05-30
Publication No.: US11086223B2

Publication Date: 2021-08-10
Inventor: Hyeonjin Shin , Sangwon Kim , Minsu Seol , Seongjun Park , Yeonchoo Cho
Applicant: Samsung Electronics Co., Ltd.
Applicant Address: KR Suwon-si
Assignee: Samsung Electronics Co., Ltd.
Current Assignee: Samsung Electronics Co., Ltd.
Current Assignee Address: KR Suwon-si
Agency: Harness, Dickey & Pierce, P.L.C.
Priority: KR10-2015-0047492 20150403
Main IPC: G03F7/36
IPC: G03F7/36 ; G03F7/11 ; G03F7/09 ; G03F7/16

Abstract:

A hardmask composition may include graphene nanoparticles having a size in a range of about 5 nm to about 100 nm and a solvent.

Public/Granted literature

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Espacenet

IPC分类:

G	物理
G03	摄影术；电影术；利用了光波以外其他波的类似技术；电记录术；全息摄影术
G03F	图纹面的照相制版工艺，例如，印刷工艺、半导体器件的加工工艺；其所用材料；其所用原版；其所用专用设备（照相排版装置入B41B；为摄影用的感光材料或处理入G03C；电记录、感光层或处理入G03G）
G03F7/00	图纹面，例如，印刷表面的照相制版如光刻工艺；图纹面照相制版用的材料，如：含光致抗蚀剂的材料；图纹面照相制版的专用设备（用于特殊工艺的光致抗蚀剂结构见相关的位置，例如，B44C，H01L，例如，H01L21/00，H05K）
G03F7/26	.感光材料的处理及其设备（G03F7/12至G03F7/24优先）
G03F7/36	..G03F7/30至G03F7/34组中不包括的影像去除，例如，用气流、用等离子体去除影像