Transistor including two-dimensional (2D) channel

    公开(公告)号:US12087818B2

    公开(公告)日:2024-09-10

    申请号:US17967200

    申请日:2022-10-17

    摘要: A transistor including at least one two-dimensional (2D) channel is disclosed. A transistor according to some example embodiments includes first to third electrodes separated from each other, and a channel layer that is in contact with the first and second electrodes, parallel to the third electrode, and includes at least one 2D channel. The at least one 2D channel includes at least two regions having different doping concentrations. A transistor according to some example embodiments includes: first to third electrodes separated from each other; a 2D channel layer that is in contact with the first and second electrodes and parallel to the third electrode; a first doping layer disposed under the 2D channel layer corresponding to the first electrode; and a second doping layer disposed under the 2D channel layer corresponding to the second electrode, wherein the first and second doping layers contact the 2D channel layer.

    Field effect transistor including channel formed of 2D material

    公开(公告)号:US11532709B2

    公开(公告)日:2022-12-20

    申请号:US17203010

    申请日:2021-03-16

    摘要: A field effect transistor includes a substrate, a source electrode and a drain electrode on the substrate and apart from each other in a first direction, a plurality of channel layers, a gate insulating film surrounding each of the plurality of channel layers, and a gate electrode surrounding the gate insulating film. Each of the plurality of channel layers has ends contacting the source electrode and the drain electrode. The plurality of channel layers are spaced apart from each other in a second direction away from the substrate. The plurality of channel layers include a 2D semiconductor material.