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1.发明授权公开(公告)号：US12122732B2
公开(公告)日：2024-10-22
申请号：US17211174
申请日：2021-03-24
发明人： Sangwon Kim , Changsik Song , Juhyen Lee , Hyejin Cho , Hyeonjin Shin , Minsu Seol , Dongwook Lee
CPC分类号： C07C15/38 , H10K85/622 , H10K85/624 , H10K50/15 , H10K50/16 , H10K50/171 , H10K50/18
摘要： Provided are a functionalized polycyclic aromatic hydrocarbon compound and a light-emitting device including the same. The functionalized polycyclic aromatic hydrocarbon compound is structurally stable, and exhibits high light-emission characteristics since aggregation caused by π-π stacking is inhibited, and thus may have high efficiency and long lifespan characteristics.
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公开(公告)号：US12087818B2
公开(公告)日：2024-09-10
申请号：US17967200
申请日：2022-10-17
发明人： Minhyun Lee , Minsu Seol , Hyeonjin Shin
IPC分类号： H01L29/10 , H01L29/36 , H01L29/423
CPC分类号： H01L29/1033 , H01L29/36 , H01L29/4232
摘要： A transistor including at least one two-dimensional (2D) channel is disclosed. A transistor according to some example embodiments includes first to third electrodes separated from each other, and a channel layer that is in contact with the first and second electrodes, parallel to the third electrode, and includes at least one 2D channel. The at least one 2D channel includes at least two regions having different doping concentrations. A transistor according to some example embodiments includes: first to third electrodes separated from each other; a 2D channel layer that is in contact with the first and second electrodes and parallel to the third electrode; a first doping layer disposed under the 2D channel layer corresponding to the first electrode; and a second doping layer disposed under the 2D channel layer corresponding to the second electrode, wherein the first and second doping layers contact the 2D channel layer.
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公开(公告)号：US11532709B2
公开(公告)日：2022-12-20
申请号：US17203010
申请日：2021-03-16
发明人： Minhyun Lee , Minsu Seol , Yeonchoo Cho , Hyeonjin Shin
IPC分类号： H01L29/10 , H01L29/24 , H01L29/423
摘要： A field effect transistor includes a substrate, a source electrode and a drain electrode on the substrate and apart from each other in a first direction, a plurality of channel layers, a gate insulating film surrounding each of the plurality of channel layers, and a gate electrode surrounding the gate insulating film. Each of the plurality of channel layers has ends contacting the source electrode and the drain electrode. The plurality of channel layers are spaced apart from each other in a second direction away from the substrate. The plurality of channel layers include a 2D semiconductor material.
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公开(公告)号：US11431265B2
公开(公告)日：2022-08-30
申请号：US17007035
申请日：2020-08-31
发明人： Kyungeun Byun , Jaeyoung Kim , Minsu Seol , Hyeonjin Shin , Jeongmin Baik , Woojung Yang , Byeonguk Ye , Jaewon Lee , Jinpyo Lee , Kyeongnam Kim
IPC分类号： H02N1/04
摘要： A triboelectric generator includes a first electrode and a second electrode spaced apart from each other, a first charging part on the first electrode, a second charging part on the second electrode, and a grounding unit. The first charging part and the second charging part may be configured to contact each other through a sliding motion. The grounding unit may be configured to intermittently connect a charge reservoir to the second charging part. The grounding unit may be configured to vary the electric potential of the second charging part so as to amplify current flowing between electrodes of the triboelectric generator.
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公开(公告)号：US11086223B2
公开(公告)日：2021-08-10
申请号：US16426046
申请日：2019-05-30
发明人： Hyeonjin Shin , Sangwon Kim , Minsu Seol , Seongjun Park , Yeonchoo Cho
摘要： A hardmask composition may include graphene nanoparticles having a size in a range of about 5 nm to about 100 nm and a solvent.
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公开(公告)号：US11034847B2
公开(公告)日：2021-06-15
申请号：US15944920
申请日：2018-04-04
发明人： Minsu Seol , Sangwon Kim , Hyeonjin Shin , Dongwook Lee , Seongjun Park , Yunseong Lee , Seongjun Jeong , Alum Jung
IPC分类号： C09D7/63 , G03F7/11 , G03F7/09 , G03F7/07 , G03F7/40 , C07F3/02 , G03F7/16 , G03F7/20 , G03F7/32 , G03F7/38 , H01L21/311 , H01L21/3213 , G03F7/075
摘要： Provided are a hardmask composition including a structure represented by Formula 1 and a solvent, a method of forming a pattern using the hardmask composition, and a hardmask formed from the hardmask composition. wherein in Formula 1, R1 to R8, X, and M are described in detail in the detailed description.
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公开(公告)号：US12027588B2
公开(公告)日：2024-07-02
申请号：US18056446
申请日：2022-11-17
发明人： Minhyun Lee , Minsu Seol , Yeonchoo Cho , Hyeonjin Shin
IPC分类号： H01L29/10 , H01L29/24 , H01L29/423
CPC分类号： H01L29/1033 , H01L29/24 , H01L29/42356 , H01L29/42364
摘要： A field effect transistor includes a substrate, a source electrode and a drain electrode on the substrate and apart from each other in a first direction, a plurality of channel layers, a gate insulating film surrounding each of the plurality of channel layers, and a gate electrode surrounding the gate insulating film. Each of the plurality of channel layers has ends contacting the source electrode and the drain electrode. The plurality of channel layers are spaced apart from each other in a second direction away from the substrate. The plurality of channel layers include a 2D semiconductor material.
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公开(公告)号：US11935790B2
公开(公告)日：2024-03-19
申请号：US17370480
申请日：2021-07-08
发明人： Minsu Seol , Minhyun Lee , Junyoung Kwon , Hyeonjin Shin , Minseok Yoo
IPC分类号： H01L21/8234 , H01L21/02 , H01L29/06 , H01L29/16 , H01L29/24 , H01L29/423 , H01L29/66 , H01L29/76 , H01L29/786
CPC分类号： H01L21/823412 , H01L21/02521 , H01L21/02527 , H01L21/02568 , H01L21/0259 , H01L21/823431 , H01L29/0665 , H01L29/1606 , H01L29/24 , H01L29/42392 , H01L29/66045 , H01L29/66969 , H01L29/7606 , H01L29/78696
摘要： Disclosed are a field effect transistor and a method of manufacturing the same. The field effect transistor includes a source electrode on a substrate, a drain electrode separated from the source electrode, and channels connected between the source electrode and the drain electrode, gate insulating layers, and a gate electrode. The channels may have a hollow closed cross-sectional structure when viewed in a first cross-section formed by a plane across the source electrode and the drain electrode in a direction perpendicular to the substrate. The gate insulating layers may be in the channels. The gate electrode may be insulated from the source electrode and the drain electrode by the gate insulating layers.
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9.发明公开公开(公告)号：US20240047564A1
公开(公告)日：2024-02-08
申请号：US18321290
申请日：2023-05-22
发明人： Joungeun YOO , Changhyun Kim , Kyung-Eun Byun , Minsu Seol , Keunwook Shin , Eunkyu Lee
CPC分类号： H01L29/7606 , H01L29/24
摘要： A semiconductor device may include a channel layer including a two-dimensional (2D) semiconductor material, a gate insulating layer on a center portion of the channel layer, a gate electrode on the gate insulating layer, and a first conductive layer and a second conductive layer respectively contacting opposite sides of the channel layer. Each of the first and second conductive layers may include metal boride.
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10.发明公开公开(公告)号：US20240021683A1
公开(公告)日：2024-01-18
申请号：US18152976
申请日：2023-01-11
发明人： Duseop YOON , Junyoung Kwon , Minsu Seol , Minseok Yoo , Kyung-Eun Byun
IPC分类号： H01L29/417 , H01L29/40 , H01L29/45
CPC分类号： H01L29/41733 , H01L29/401 , H01L29/45 , H01L29/24
摘要： A semiconductor device may include a two-dimensional material layer, one or more metal islands on the two-dimensional material layer, and a metal layer covering the metal islands on the two-dimensional material layer. The semiconductor device may be manufactured by a method including forming metal islands on a two-dimensional material layer using a redox method and forming a metal layer covering the metal islands on the two-dimensional material layer.
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